2013 Fiscal Year Final Research Report
Development of High Efficiency Thin-Substrate Silicon Solar Cells with Controlled Nano-Interface
| Project/Area Number |
22246001
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
KONAGAI Makoto 東京工業大学, 理工学研究科, 教授 (40111653)
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| Co-Investigator(Kenkyū-buntansha) |
宮島 晋介 東京工業大学, 大学院理工学研究科, 准教授 (90422526)
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| Project Period (FY) |
2010-04-01 – 2014-03-31
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| Keywords | 太陽電池 / 太陽光発電 / ヘテロ接合 / シリコン太陽電池 |
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| Research Abstract |
Silicon heterojunction solar cells have the potential to achieve high conversion efficiencies. In order to achieve high open circuit voltages, passivation of dangling bonds on the c-Si surface is indispensable. One of the most used passivation materials for heterojunction solar cells is the hydrogenated amorphous silicon (a-Si:H). a-Si:H is known to have a high passivation quality, but it shows harmful epitaxial growth when deposited at relatively high deposition temperatures, deteriorating the passivation effect. In this study wide-bandgap amorphous silicon oxide (a-SiO:H) or nano-crystalline 3C-SiC is applied as an alternative to the conventional a-Si:H to suppress the epitaxial growth, resulting with a very low surface recombination velocity. Up to now, an efficiency of 20.1 % has been achieved with a high open circuit voltage of 708 mV, and the original goals have been met.
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