2012 Fiscal Year Final Research Report
Growth of high-quality thick InGaN by raised-pressure MOVPE
| Project/Area Number |
22246004
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Nagoya University |
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Principal Investigator |
AMANO Hiroshi 名古屋大学, 工学研究科, 教授 (60202694)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAGUCHI Masahito 名古屋大学, 大学院・工学研究科, 准教授 (20273261)
HONDA Yoshio 名古屋大学, 大学院・工学研究科, 助教 (60362274)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 結晶成長 / 可視長波長 LED / 圧力印加有機金属化合物気相成長法 |
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| Research Abstract |
MOVPE reactor having two buffer tanks for the supply of pressurized TMGa and TMIn, has been operated from 1 atm to 10 atm. It was found that with increasing the reactor pressure, thermal conductivity of the gas increases, thus metalorganic precursors were fully decomposed before reaching the substrate. Therefore, reactor was redesigned and repaired. Then, we can successfully grow high In content InGaN at raised pressure. InGaN based-quantum wells grown at 6 atm shows emission wavelength longer than 120 nm compared with that grown at 1 atm.
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