2013 Fiscal Year Final Research Report
Atmospheric-pressure plasma processes for high-rate film formation applicable for thin crystalline Si solar cells
| Project/Area Number |
22246017
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Osaka University |
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Principal Investigator |
KIYOSHI Yasutake 大阪大学, 工学(系)研究科(研究院), 教授 (80166503)
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| Co-Investigator(Kenkyū-buntansha) |
KAKIUCHI Hiroaki 大阪大学, 大学院工学研究科, 准教授 (10233660)
OHMI Hiromasa 大阪大学, 大学院工学研究科, 助教 (00335382)
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| Project Period (FY) |
2010-04-01 – 2014-03-31
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| Keywords | シリコン / 大気圧プラズマCVD / 大気圧プラズマ酸化 / エピタキシャル成長 / 表面パッシベーション |
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| Research Abstract |
Atmospheric pressure (AP) plasma processes applicable for the formation of thin crystalline Si solar cells have been developed.
For the stable growth of Si epitaxial films at 600 C by AP plasma chemical vapor deposition, a new water cooled electrode system was developed. By using this system, 2 times higher utilization efficiency of SiH4 than the previous one, the high-rate growth with the suppressed input power using a smaller plasma gap, and the precise control of in-situ doping epitaxy were achievable.
SiO2 films with good electrical properties were grown at 400 C by AP He plasma oxidation of Si, and a good surface passivation quality was demonstrated. AP Ar plasma oxidation process under an open air condition has also been developed to form high quality SiO2 films.
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Research Products
(14 results)
