2013 Fiscal Year Final Research Report
Helicon-wave-excited-plasma sputtering epitaxy of polariton laser structures for room temperature operation
| Project/Area Number |
22246037
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (A)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Tohoku University |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
SOTA Takayuki 早稲田大学, 理工学術院, 教授 (90171371)
UEDONO Akira 筑波大学, 数理物質科学研究科, 教授 (20213374)
HAZU Kouji 東北大学, 多元物質科学研究所, 助教 (30367057)
FURUSAWA Kentaro 東北大学, 多元物質科学研究所, 助教 (40392104)
|
|---|
| Project Period (FY) |
2010-04-01 – 2014-03-31
|
| Keywords | 電子・電気材料 / ヘリコン波励起プラズマスパッタ / 微小共振器 / 励起子 / 励起子ポラリトン / 酸化亜鉛 / エピタキシー / ポラリトンレーザー |
|---|
| Research Abstract |
A cavity-coupled exciton-polariton laser, namely cavity-polariton laser, has been attracting attention as a new generation low-threshold current density coherent light source composed of a semiconductor microcavity. In the present research, a microcavity composed of a ZnO active region sandwiched by pairwise distributed Bragg reflectors (DBRs) that most likely operates at room temperature was fabricated using a uniquely designed Helicon-Wave-Excited Plasma Sputtering (HWPS) method, which enables to grow high quality epitaxial semiconductor films. We eventually observed an enhanced emission peak at around 3.25 eV, which originates from an exciton-polariton emission coupled with a cavity mode. We therefore conclude that a way to fabricate new functional quantum heterostructures and to characterize them was cut open using the growth, fabrication, and characterization methods developed by this research project.
|
Research Products
(14 results)
