シリコン量子ドットの精密位置制御と量子情報素子の作製

2011 Fiscal Year Annual Research Report

• Project/Area Number: 22246040
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: 小田 俊理 東京工業大学, 量子ナノエレクトロニクス研究センター, 教授 (50126314)
• Co-Investigator(Kenkyū-buntansha): 小寺 哲夫 東京工業大学, 量子ナノエレクトロニクス研究センター, 助教 (00466856)
• Keywords: シリコン量子ドット / ナノ結晶配列制御 / 量子情報デバイス / 少数電荷センサ / スピン制御量子ビット

Research Abstract

ナノシリコン量子ドットの精密配列制御により量子情報デバイスの集積化を目指す研究を行い、以下の成果を得た。
(1)ナノシリコンの配列制御には、ディップコーティング法に電気泳動法を組み合わせて、ストライプ構造の発生を抑えた大面積で均一な単層膜の形成に成功した。
(2)ナノ結晶シリコン表面の酸化膜を制御する方法として、ラジカル窒化技術の条件を探索すると共に、無水フッ酸蒸気を利用したエッチング法により、再酸化を抑えることに成功した。無水フッ酸を利用した場合にフッ素原子がシリコンに結合して再酸化を防止するというモデルを提案した。
(3)ナノ結晶シリコン集合体にレーザアニール処理を施して、電子輸送特性と粒径の関係を調べた。
(4)電極間隔9nmのナノギャップ電極の作製技術を確立し、この間に1個のナノ結晶シリコンを配置したデバイスを作製した。クーロン振動や特異な磁場依存性の測定を行った。
(5)電子ビーム露光技術により2重または3重に結合した量子ドットと少数電荷検出用の単電子トランジスタを集積したデバイスを作製した。結合量子ドット中の電荷数を0個、1個、2個と制御することに成功した。また、微小磁石を集積するために、従来のトップゲート構造に変わり、バックゲート構造を持つ結合量子ドットの作製にも成功した。
(6)スピンベースシリコン量子ビットのスピン緩和時間を明らかにする目的で高周波時間分解測定をケンブリッジ大学と共同研究を行い、2重結合電荷センサ集積デバイスの測定を行うと共に、高周波測定系を東工大で構築する準備を整えた。

Current Status of Research Progress

2: Research has progressed on the whole more than it was originally planned.

Reason

ナノ結晶シリコンの配列制御、量子ドットの集積化とも順調に進めることができた。

Strategy for Future Research Activity

ナノ結晶シリコン集積構造の電子輸送特性については、窒素ラジカルによる表面窒化技術を確立することが最重要課題である。また、多重結合量子ドットについては、少数電荷状態を制御できるので、スピンブロッケードの観測、スピンコヒーレンス時間の測定が次の課題である。

Research Products

• [Journal Article] Temperature Evolution of Spin Polarized Electron Tunneling in Silicon Nanowire-Permalloy Lateral Spin Valve System (2012)
  • Author(s): Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, YoshiChika Otani, Naoki Fukata, Koji Ishibashi, and Shunri Oda
  • Journal Title: Applied Physics Express Volume: 5 Pages: 045001(3pages)
  • DOI: DOI:10.1143/APEX.5.045001
  • Peer Reviewed
• [Journal Article] A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure (2012)
  • Author(s): Muhammad Amin Sulthoni, Tetsuo Kodera, Yukio Kawano, and Shunri Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 51 Pages: 02BJ10(4pages)
  • DOI: DOI:10.1143/JJAP.51.02BJ10
  • Peer Reviewed
• [Journal Article] Conduction Bottleneck in Silicon Nanochain Single Electron Transistors Operating at Room Temperature (2012)
  • Author(s): M. A. Rafiq, Katsunori Masubuchi,Zahid A. K. Durrani, Alan Colli, Hiroshi Mizuta, William I. Milne, and Shunri Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 51 Pages: 025202(6pages)
  • DOI: DOI:10.1143/JJAP.51.025202
  • Peer Reviewed
• [Journal Article] High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors (2012)
  • Author(s): Muhammad A. Rafiq, Katsunori Masubuchi, Zahid A.K. Durrani, Alan Colli, Hiroshi Mizuta, William I.Milne, Shunri Oda
  • Journal Title: Applied Physics Letters Volume: 100 Pages: 113108(4pages)
  • DOI: 10.1063/1.3694046
  • Peer Reviewed
• [Journal Article] Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching (2011)
  • Author(s): Yoshifumi Nakamine, Tetsuo Kodera, Ken Uchida, and Shunri Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Pages: 115002(4pages)
  • DOI: DOI:10.1143/JJAP.50.115002
  • Peer Reviewed
• [Journal Article] Demonstration of spin valve effects in Silicon nanowires (2011)
  • Author(s): Jean L.Tarun, Shaoyun Huang, Y.Fukuma, H.Idzuchi, Y.Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda
  • Journal Title: Journal of Applied Physics Volume: 109 Pages: 07C508(3pages)
  • DOI: 10.1063/1.3562904
  • Peer Reviewed
• [Journal Article] Detection of variable tunneling rates in silicon quantum dots (2011)
  • Author(s): A.Rossi, T.Ferrus, W.Lin, T.Kodera, D.A.Williams, S.Oda
  • Journal Title: Applied Physics Letters Volume: 98 Pages: 133506(3pages)
  • DOI: 10.1063/1.3573991
  • Peer Reviewed
• [Journal Article] Numerical Simulation Study of Electrostatically Defined Silicon Double Quantum Dot Device (2011)
  • Author(s): Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, Shunri Oda
  • Journal Title: Journal of Applied Physics Volume: 110 Pages: 054511(4pages)
  • DOI: 10.1063/1.3627238
  • Peer Reviewed
• [Journal Article] Growth of Narrow and Straight Germanium Nanowires by Vapour-Liquid-Solid Chemical-Vapour-Deposition (2011)
  • Author(s): Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Pages: 105002(6pages)
  • DOI: 10.1143/JJAP.50.105002
  • Peer Reviewed
• [Presentation] NeoSilicon Based Nano-electromechanical Information Devices (2011)
  • Author(s): S.Oda
  • Organizer: International Conference on Theoretical and Applied Physics
  • Place of Presentation: Kharagpur, India(招待講演)
  • Year and Date: 2011-12-01
• [Presentation] NeoSilicon Based Nano-electromechanical Devices (2011)
  • Author(s): S.Oda
  • Organizer: THE 3rd INTERNATIONAL WORKSHOP ONNANOTECHNOLOGY AND APPLIC ATION-IWNA 2011
  • Place of Presentation: Vung Tau, Vietnam(招待講演)
  • Year and Date: 2011-11-11
• [Presentation] NeoSilicon Based Nano-electromechanical Information Devices (2011)
  • Author(s): S.Oda
  • Organizer: International Workshop on Group IV Nano-materials and Advanced Devices
  • Place of Presentation: Nanjing, China(招待講演)
  • Year and Date: 2011-11-07
• [Presentation] Microscopic Study of the Germanium Nanowires grown at Low-temperatures by Au-catalysed Chemical Vapour Deposition (2011)
  • Author(s): M.Simanullang, K.Usami, T.Kodera, K.Uchida
  • Organizer: MNC 2011
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-10-27
• [Presentation] Influence of Backgate Voltage on Spin Valve (2011)
  • Author(s): J.Tarun, S.Huang, Y.Fukuma, H.Idzuchi, Y.Otani, T.Kodera, N.Fukata, K.Ishibashi S.Oda
  • Organizer: MNC 2011
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-10-26
• [Presentation] NeoSilicon Based Nano-electromechanical Information Devices (2011)
  • Author(s): S.Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan(招待講演)
  • Year and Date: 2011-10-05
• [Presentation] Transport Simulation of an Electrostatically Defined Silicon Double Quantum Dot Device (2011)
  • Author(s): Muhammad Amin Sulthoni, Tetsuo Kodera, Yukio Kawano, Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application (2011)
  • Author(s): Yoshifumi Nakamine, Ken Someno, Hiroki Nikaido, Masahiro Kouge, Tetsuo Kodera, Yukio Kawano, Ken Uchida, Mutsuko Hatano, Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Low-Temperature Magnetoresistance Studies of Silicon Nano wires with Permalloy Leads (2011)
  • Author(s): Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, Yoshichika Otani, Tetsuo Kodera, Naoki Fukata, Koji Ishibashi, Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Charge detection techniques in Si double quantum dots (2011)
  • Author(s): Tomohiro Kambara, Tetsuo Kodera, Thierry Ferrus, Alessandro Rossi, Kosuke Horibe, Yasuhiko Arakawa, David Williams, Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Synthesis of small-diameter Ge NW at low temperature for electron device application (2011)
  • Author(s): Marolop SimanuUang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Photoluminescence and Raman studies of Ge nanowires grown on Si (100) and (111) substrates (2011)
  • Author(s): Ayse Seyhan, Yoshi Ogawa, Maralop Simanullang Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Photoluminescence of Nanocrystalline Silicon Quantum Dots prepared by VHF Plasma (2011)
  • Author(s): Ken Someno, Kouichi Usami, Tetsuo Kodera, Yukio Kawano, Mutsuko Hatano, Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Electron transport in a single silicon nanocrystal between nanogap electrodes (2011)
  • Author(s): Tomotaka Sawada, Testuo Kodera, Yuki Kawano, Mustuko Hatano, Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact (2011)
  • Author(s): Y.Fukuoka, T.Kodera, K.Takeda, T.Obata, K.Yoshida, T.Otsuka, K. Sawano, K Uchida, Y.Shiraki, S.Tarucha, S.Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Fabrication of few-electron silicon quantum dot devices based on an SOI substrate with a top gate cintact (2011)
  • Author(s): K.Horibe, T.Kodera, T.Kambara, K.Uchida, S.Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Development of silicon quantum dot devices toward spin quantum bits (2011)
  • Author(s): T.Kodera, K.Horibe, W.Lin, T.Kambara, T.Ferrus, A.Rossi, K.Uchida, D.A.Williams, Y.Arakawa, S.Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] A Multi-purpose Electrostatically Defi ned Silicon Quantum Dot Structure (2011)
  • Author(s): M.A.Sulthoni, T.Kodera, Y.Kawano S.Oda
  • Organizer: Solid State Devices and Materials Conference
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2011-09-29
• [Presentation] GERMANIUM NANOWIRES WITH 3-NM-DIAMETER PR EPARED BY LOW TEMPERATURE (260OC) VAPOUR-LIQ UID-SOLID CHEMICAL VAPOUR DEPOSITION (2011)
  • Author(s): M.Simanullang, K.Usami, T.Kodera, K.Uchida, S.Oda
  • Organizer: EuroCVD 18
  • Place of Presentation: Kinsale, Irelamd
  • Year and Date: 2011-09-07
• [Presentation] Electrical Property of Nano-Crystalline Silicon Thin-Films Prepared by Very High Frequency Plasma Deposition System (2011)
  • Author(s): Yoshifumi Nakamine, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Shunri Oda
  • Organizer: 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24)
  • Place of Presentation: Nara, Japan
  • Year and Date: 2011-08-25
• [Presentation] Photoluminescence of Nanocrystalline ICANS-24Silicon Quantum Dots Prepared by VHF Plasma Cell (2011)
  • Author(s): Ken Someno, Kouichi Usami, Tetsuo Kodera, Mutsuko Hatano, Shunri Oda
  • Organizer: 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24)
  • Place of Presentation: Nara, Japan
  • Year and Date: 2011-08-23
• [Presentation] Observation of single-electron regime in a silicon quantum dot by a single-electron transistor (2011)
  • Author(s): Kousuke Horibe, Tetsuo Kodera, Tomohiro Kambara, Ken Uchida, Shunri Oda
  • Organizer: EP2DS-19
  • Place of Presentation: Tallahassee, U.S.A.
  • Year and Date: 2011-07-26
• [Presentation] Triangularly-positioned silicon triple quantum dots (2011)
  • Author(s): Tetsuo Kodera, Kousuke Horibe, H.Hayashi, Tomohiro Kambara, Ken Uchida, Yasuhiko Arakawa, Shunri Oda
  • Organizer: EP2DS-19
  • Place of Presentation: Tallahassee, U.S.A.
  • Year and Date: 2011-07-26
• [Presentation] NeoSilicon Based Nano-electromechanical Information Devices (2011)
  • Author(s): S.Oda
  • Organizer: 18th International Conference on Mixed Design of Integrated Circuits and Systems
  • Place of Presentation: Gliwice, Poland(招待講演)
  • Year and Date: 2011-06-16
• [Presentation] Charge Detection in Silicon Quantum Dots Coupled in Parallel (2011)
  • Author(s): T.Kodera, K.Horibe, W.Lin, T.Kambara, T.Ferrus, A.Rossi, K.Uchida, D.A.Williams, Y.Arakawa, S.Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-06-13
• [Presentation] Magnetoresistance of Cobalt-Contacted Silicon Nanowire (2011)
  • Author(s): Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, YoshiChika Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-06-12
• [Presentation] Electrical Property of Nano-Crystalline Silicon Thin-Films Transistors Prepared by Very High Frequency Plasma Deposition System (2011)
  • Author(s): Yoshifumi Nakamine, Mohammad R.T.Mofrad, Michiel van der Zwan, Johan van der Cingel, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Ryoichi Ishihara, Shunri Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-06-12
• [Presentation] Simulation Study of Electrostatically Defined Silicon Double Quantum Dot Device (2011)
  • Author(s): Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, Shunri Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-06-12
• [Presentation] Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact (2011)
  • Author(s): Y.Fukuoka, T.Kodera, T.Otsuka, K.Takeda, T.Obata, K.Yoshida, K.Sawano, K Uchida, Y.Shiraki, S.Tarucha, S.Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-06-12
• [Presentation] An apparent metal-insulator transition in a phosphorous doped silicon single electron transistor (2011)
  • Author(s): T.Ferrus, A.Rossi, W.Lin, D.A.Williams, T.Kodera, S.Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-06-12
• [Presentation] Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application (2011)
  • Author(s): Yoshifumi Nakamine, Ken Someno, Hiroki Nikaido, Masahiro Kouge, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Shunri Oda
  • Organizer: 7th International Nanotechnology Conference on Communication and Cooperation (INC7)
  • Place of Presentation: Albany, U.S.A
  • Year and Date: 2011-05-16
• [Presentation] Synthesis of small-diameter Ge NW at low temperature for electron device application (2011)
  • Author(s): Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda
  • Organizer: 7th International Nanotechnology Conference on Communication and Cooperation (INC7)
  • Place of Presentation: Albany, U.S.A
  • Year and Date: 2011-05-16
• [Presentation] Observation of Pauli-Spin Blockade and Single-Electron Regime in Silicon Coupled Quantum Dots (2011)
  • Author(s): Tetsuo Kodera, Kousuke Horibe, Tomohiro Kambara, Gento Yamahata, Ken Uchida, Yasuhiko Arakawa, Shunri Oda
  • Organizer: 7th International Nanotechnology Conference on Communication and Cooperation (INC7)
  • Place of Presentation: Albany, U.S.A
  • Year and Date: 2011-05-16
• [Presentation] Laser Annealing of Silicon Nanocrystals Thin-films Prepared by VHF Plasma Deposition System (2011)
  • Author(s): Y. Nakamine, Michiel van der Zwan, Johan van der Cingel, Tetsuo Kodera, Ken Uchida, Ryoichi Ishihara, Shunri Oda
  • Organizer: Materials Research Society
  • Place of Presentation: San Francisco, U.S.A
  • Year and Date: 2011-04-25
• [Book] メモリデバイス (2011)
  • Author(s): 小田俊理
  • Total Pages: 3
  • Publisher: 電子情報通信学会「知識ベース」(オーム社)
• [Book] Si量子ドットを用いた単電子トランジスタの研究 (2011)
  • Author(s): 小田俊理
  • Total Pages: 12
  • Publisher: 量子ドットエレクトロニクスの最前線(エヌ・ティー・エス)
• [Remarks]
  • URL: http://odalab.pe.titech.ac.jp/index.html