2012 Fiscal Year Final Research Report
Development of new high power deep UV light emitting device
| Project/Area Number |
22246051
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Ritsumeikan University |
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Principal Investigator |
AOYAGI Yoshinobu 立命館大学, 立命館グローバル・イノベーション研究機構, 特別招聘教授 (70087469)
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| Co-Investigator(Kenkyū-buntansha) |
TAKEUCHI Misaichi 立命館大学, 立命館グローバル, 准教授 (60284585)
KUROUCHI Masahito 立命館大学, 立命館グローバル・イノベーション研究機構, ポストドクトラルフェロー (10452187)
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| Research Collaborator |
KUROSE Noriko PIリサーチ, 主任研究員
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| Project Period (FY) |
2010 – 2012
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| Keywords | 深紫外光 / マイクロプラズマ / AlGaN / MIPE / 深紫外発光素子 / 水浄化 / 医療応用 / 高出力 |
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| Research Abstract |
A dynamically-controlled micro-plasma-excited (MIPE) aluminum gallium nitride deepultraviolet (DUV) light-emitting device is demonstrated. This device provides high-powerDUV emission at any desired wavelength, and allows enlargement of emission areas likeplasma display panels for easy, low-cost fabrication. Neither p-n junctions nor electrodecontacts are required for device fabrication. We fabricated 2-inch diameter wafer-sizeMIPE emitters of DUV light at specific wavelengths from AlGaN quantum wells with 50 mWaverage output power. We can also fabricate 6-inch diameter DUV emitters using sapphirewafers and 1 m×5 m panel-type DUV emitters.
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[Journal Article]2013
Author(s)
Y. Aoyagi, N. Kurose
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Journal Title
Applied PhysicsLetters
Pages: 041114-1-041114-3.
Peer Reviewed
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[Journal Article]2012
Author(s)
Y. Aoyagi, M. Takeuchi, K. Yoshida, M. Kurouchi, Y. Nanishi, H. Sugano, Y. Ahiko,H. Nakamura
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Journal Title
Journal of Environmental Protection
Volume: 137
Pages: 1215-1218
Peer Reviewed
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