2013 Fiscal Year Final Research Report
Search for highly spin polarized ferromagnetic materials and their applications to magnetoresistive devices
| Project/Area Number |
22246091
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Structural/Functional materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
HONO KAZUHIRO 独立行政法人物質・材料研究機構, 磁性材料ユニット, フェロー (60229151)
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| Co-Investigator(Kenkyū-buntansha) |
TAKAHASHI Yukiko 独立行政法人物質・材料研究機構, 磁性材料ユニット, 主幹研究員 (50421392)
HAYASHI Masamitsu 独立行政法人物質・材料研究機構, 磁性材料ユニット, 主任研究員 (70517854)
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| Co-Investigator(Renkei-kenkyūsha) |
MITANI Seiji 独立行政法人物質・材料研究機構, 磁性材料ユニット, グループリーダー (20250813)
KASAI Shinya 独立行政法人物質・材料研究機構, 磁性材料ユニット, 主任研究員 (20378855)
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| Project Period (FY) |
2010-04-01 – 2014-03-31
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| Keywords | 磁性材料 / スピントロニクス |
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| Research Abstract |
We have explored highly spin polarized ferromagnetic Heusler alloys by point contact Andreev reflection measurements. Among various Co2Fe(Z,Z') and Co2Mn(Z,Z') alloys that we explored, we found Co2Fe(Ga,Ge) and Co2Mn(Ga,Ge) alloys are of a particular interest in view of their high spin polarization.
Using these Heusler alloys as FM layers in combination with Ag, Cu, NiAl, Cu2TiAl as nonferromagnetic (NM) spacer layers, we fabricated current- perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo spin vales. We have demonstrated a large MR output of (delta)RA > 12 m(omega)(mu)m2 with a MR ratio of DR/R=12% at room temperature from an optimally annealed Co2Mn(Ge,Ga)/Ag/Co2Mn(Ge,Ga) PSV. We also found the crystallographic orientation dependence of MR outputs for the first time and demonstrated a [001]-textured polycrystalline Heusler/Ag/Heusler CPP-GMR, which paved a new path for higher MR output of CPP-GMR devices.
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