2013 Fiscal Year Final Research Report
Formation of wafer-scale graphene by molecular beam epitaxy
| Project/Area Number |
22310077
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | NTT Basic Research Laboratories |
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Principal Investigator |
MAEDA Fumihiko 日本電信電話株式会社ＮＴＴ物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 (70393741)
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| Co-Investigator(Kenkyū-buntansha) |
HIBINO Hiroki 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 部長 (60393740)
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| Co-Investigator(Renkei-kenkyūsha) |
KOBAYASHI Yasuyuki 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 (90393727)
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| Project Period (FY) |
2010-04-01 – 2014-03-31
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| Keywords | ナノ構造形成・制御 / グラフェン / 結晶成長 |
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| Research Abstract |
To form large-area graphene in wafer size by employing gas-source molecular beam epitaxy, we investigated the growth process of graphene and the formation of heterostructure of graphene on semiconducting substrates. We found that competitive reactions, growth and etching, occur when ethanol is used for the growth gas and the suppression of etching is crucial for the high quality graphene. In addition, the migration enhancement of growth material is the key to enlarge the single-crystal domain of graphene. For the heterostructure formation, when we select the substrate, in addition to lattice-match with graphene, the interaction between adsorbates of growth material and a substrate is significant factor.
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