2012 Fiscal Year Final Research Report
Study on the nonlinear characteristics in semiconductor nanowire three branch junction and its control
Project/Area Number |
22310084
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Microdevices/Nanodevices
|
Research Institution | Hokkaido University |
Principal Investigator |
KASAI Seiya 北海道大学, 大学院・情報科学研究科, 准教授 (30312383)
|
Co-Investigator(Kenkyū-buntansha) |
MAEMOTO Toshihiko 大阪工業大学, 工学部, 准教授 (80280072)
|
Project Period (FY) |
2010 – 2012
|
Keywords | 半導体ナノワイヤ / 3分岐接合 / ナノデバイス / 非線形 / ゲート制御 |
Research Abstract |
In order to understand the mechanism of the nonlinear electric characteristics in the semiconductor-based three-branch nanowire junction (TBJ) device, we have developed a light-induced local conductance modulation system and characterized the device. We clarified that the non-uniform distribution of conductance inside the TBJ resulted in the nonlinear characteristics. For application of the TBJ, we designed and fabricated NAND gates and flip-flop circuits integrating the TBJ devices, and succeeded in their correct operation. We have extended the TBJ technology to other materials, such as graphene and ZnO.
|
Research Products
(12 results)