2012 Fiscal Year Final Research Report
Study on the nonlinear characteristics in semiconductor nanowire three branch junction and its control
| Project/Area Number |
22310084
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Hokkaido University |
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Principal Investigator |
KASAI Seiya 北海道大学, 大学院・情報科学研究科, 准教授 (30312383)
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| Co-Investigator(Kenkyū-buntansha) |
MAEMOTO Toshihiko 大阪工業大学, 工学部, 准教授 (80280072)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 半導体ナノワイヤ / 3分岐接合 / ナノデバイス / 非線形 / ゲート制御 |
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| Research Abstract |
In order to understand the mechanism of the nonlinear electric characteristics in the semiconductor-based three-branch nanowire junction (TBJ) device, we have developed a light-induced local conductance modulation system and characterized the device. We clarified that the non-uniform distribution of conductance inside the TBJ resulted in the nonlinear characteristics. For application of the TBJ, we designed and fabricated NAND gates and flip-flop circuits integrating the TBJ devices, and succeeded in their correct operation. We have extended the TBJ technology to other materials, such as graphene and ZnO.
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