2012 Fiscal Year Final Research Report
Development of atom-scale design and characterization technique towards single-dopant controlled silicon nanoelectronics
| Project/Area Number |
22310085
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Japan Advanced Institute of Science and Technology (2011-2012)
Shizuoka University (2010) |
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Principal Investigator |
MIZUTA Hiroshi 北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 教授 (90372458)
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| Co-Investigator(Kenkyū-buntansha) |
TABE Michiharu 静岡大学, 電子工学研究所, 教授 (80262799)
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| Project Period (FY) |
2010 – 2012
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| Keywords | ナノデバイス / 不純物 / 第一原理計算 |
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| Research Abstract |
We conducted large-scale ab initio analysis of single and a few dopant atoms embedded in extremely-scaled silicon nanorod and nano stub-shaped channel devices with dimensions as small as Bohr radius. We revealed the electronic states and positional stability of the single dopant atoms. A new analysis method based on PDOS spectra and 3D wavefunction visualization was introduced to identify the effective LUMO states, and we succeeded to evaluate the donor electron binding energy for the silicon nanostructures connected to the electrodes for the first time.
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