2012 Fiscal Year Final Research Report
Interfacial Engineering of Semiconductor Nanocrystals and their Carrier Dynamics by Microspectroscopy
| Project/Area Number |
22350012
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Physical chemistry
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| Research Institution | Kwansei Gakuin University |
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Principal Investigator |
TAMAI Naoto 関西学院大学, 理工学部, 教授 (60163664)
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| Co-Investigator(Kenkyū-buntansha) |
OGASAWARA Kazuyoshi 関西学院大学, 理工学部, 教授 (10283631)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 電子状態 |
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| Research Abstract |
II-VI semiconductor nanocrystals (CdS，CdSe，CdTe，PbS) were prepared by colloidal synthetic methods and their interfacial properties were controlled by interfacial engineering using various capping reagents, shells, and metal nanoparticles. Carrier dynamics of these nanocrystals were examined by femtosecond transient absorption, time-resolved emission, and single particle spectroscopy. Effects of interfacial structures and phonons on single exciton dynamics and Auger recombination due to the interaction of multiple excitons were analyzed together with the temperature dependence on carrier dynamics.
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