2012 Fiscal Year Final Research Report
Development of Silicon-Optical-Amplifier Based on Radiative Recombination in the Quantum Rod-like Electronic System Associated with {311}-Defects
| Project/Area Number |
22360004
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
FUKATSU Susumu 東京大学, 大学院・総合文化研究科, 教授 (60199164)
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| Co-Investigator(Renkei-kenkyūsha) |
YASUTAKE Yuhsuke 東京大学, 大学院・総合文化研究科, 助教 (10526726)
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| Project Period (FY) |
2010 – 2012
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| Keywords | シリコン光増幅器 / {311}欠陥 / 量子細線ロッド電子系 / 間接遷移の克服 |
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| Research Abstract |
An attempt was made to create a waveguide silicon(Si)-LED and aSi-optical-amplifier operable at cryogenic temperature by making most of the uniqueelectronic properties of quantum wire-like {311}-rod-defects developing in crystalline Sithat help break the inherent indirect bottleneck. To create Si-based active photonic devicesbased on such “tamable defects”, we have demonstrated (1) on-demand position-selectivecreation of defects, (2) silicon-optical-amplifier under current injection, (3) identificationand utilization of a new gain-boosting localized electronic system, and (4) a waveguide-LEDwith a 30-MHz modulation bandwidth operated at room temperature.
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