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2012 Fiscal Year Final Research Report

Evolution of optical-electronic-magnetic multifunctions with novel oxide semiconductors

Research Project

  • PDF
Project/Area Number 22360007
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKyoto University

Principal Investigator

FUJITA Shizuo  京都大学, 大学院・工学研究科, 教授 (20135536)

Project Period (FY) 2010 – 2012
Keywords酸化ガリウム / コランダム構造 / 混晶 / スピントロニクス / バンドギャップ制御 / ヘテロ構造 / パワーデバイス / ドーピング
Research Abstract

In order for the materials design toward new functions, we proposed simultaneous application of “band gap engineering” and “function engineering” for corundum-structured oxide materials based on α-Ga_2O_3. The former establishes the basic device structure and the latter contributes the materials functionalization. New interaction phenomena were observed by the alloying, leading to new multifunctional materials, such as ferromagnetic semiconductors with Curie temperature above room temperature, which are effective for next generation devices with novel physics.

  • Research Products

    (33 results)

All 2012 2011 2010 Other

All Journal Article (4 results) Presentation (24 results) Remarks (1 results) Patent(Industrial Property Rights) (4 results)

  • [Journal Article] Evaluation of misfit relaxation in α-Ga_2O_3 epitaxial growth on α-Al_2O_3 substrate2012

    • Author(s)
      Kentaro Kaneko, Hitoshi Kawanowa, Hiroshi Ito, and Shizuo Fujita
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: Vol.51, No.2 Pages: 020201-4

    • DOI

      DOI:10.1143/JJAP.51.020201

  • [Journal Article] Electrical conductive corundumstructured α-Ga_2O_3thin films on sapphire with tin-doping grown by spray-assisted mist chemical vapor deposition2012

    • Author(s)
      Kazuaki Akaiwa and Shizuo Fujita
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: Vol.51, No.7 Pages: 070203-6

    • DOI

      DOI:10.1143/JJAP.51.070203

  • [Journal Article] Growth and band gap control of corundum-structured α-(AlGa)_2O_3 thin films on sapphire by spray-assisted mist chemical vapor deposition2012

    • Author(s)
      Hiroshi Ito, Kentaro Kaneko, and Shizuo Fujita
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: Vol.51, No.10 Pages: 100207-10

    • DOI

      DOI:10.1143/JJAP.51.100207

  • [Journal Article] Corundum-structured α-phase Ga_2O_3-Cr_2O_3-Fe_2O_3alloy system for novel functions2010

    • Author(s)
      Kentaro Kaneko, Taichi Nomura, and Shizuo Fujita
    • Journal Title

      Physica Status Solidi C

      Volume: Vol.7, Iss.10 Pages: 2467-2470

    • DOI

      DOI:10.1002/pssc.200983896

  • [Presentation] Band gap engineering and property engineering with gallium oxide-based compounds and alloys2012

    • Author(s)
      Kentaro Kaneko, Kazuaki Akaiwa, Sam-Dong Lee, Norihiro Suzuki, and Shizuo Fujita
    • Organizer
      2012 Materials Research Society Fall Meerting
    • Place of Presentation
      Boston (USA)
    • Year and Date
      2012-11-27
  • [Presentation] Growth and electrical property of tin-doped α-Ga_2O_3 thin films on sapphire substrates2012

    • Author(s)
      Kazuaki Akaiwa and Shizuo Fujita
    • Organizer
      2012 Materials Research Society Fall Meeting
    • Place of Presentation
      Boston (USA)
    • Year and Date
      2012-11-23
  • [Presentation] Room temperature ferromagnetism in highly crystalline α-(GaFe)_2O_3 thin films2012

    • Author(s)
      Kentaro Kaneko and Shizuo Fujita
    • Organizer
      39th International Symposium on Compound Semiconductors
    • Place of Presentation
      Santa Barbara (USA)
    • Year and Date
      2012-08-28
  • [Presentation] Wide bandgap gallium oxide-based compound and alloy semkiconductors for novel functions2012

    • Author(s)
      Shizuo Fujita, Kentaro Kaneko, Kazuaki Akaiwa, San-Dong Lee, and Norihiro Suzuki
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices, 2012 German-Japanese-Spanish Joint Workshop
    • Place of Presentation
      Berlin (Germany)
    • Year and Date
      2012-07-22
  • [Presentation] Solution-based vapor deposition of novel functional oxide semiconductors2012

    • Author(s)
      Shizuo Fujita, Kentaro Kaneko, Kazuaki Akaiwa, and Norihito Suzuki
    • Organizer
      Collaborative Conference on Materials Research (CCMR) 2012
    • Place of Presentation
      Seoul (Korea)
    • Year and Date
      2012-06-25
  • [Presentation] サファイア基板上α-Ga_2O_3 薄膜の格子緩和機構の解明2012

    • Author(s)
      金子健太郎, 藤田静雄
    • Organizer
      2012 年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-18
  • [Presentation] コランダム型構造酸化物の作製と磁気特性2012

    • Author(s)
      金子健太郎,伊藤大師,赤岩和明,鈴木規央, 藤田静雄
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-16
  • [Presentation] Sn ドープしたコランダム型構造酸化ガリウムの電気特性評価2012

    • Author(s)
      赤岩和明,鈴木規央,伊藤大師,金子健太郎, 藤田静雄
    • Organizer
      2012 年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-16
  • [Presentation] 超音波噴霧ミスト CVD 法によるcorundum 型構造酸化物混晶薄膜の成長2012

    • Author(s)
      伊藤大師,鈴木規央,金子健太郎,藤田静雄
    • Organizer
      2012 年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-16
  • [Presentation] Solution-based vapor deposition of green materials: oxides and organic thin films and nanomaterials2011

    • Author(s)
      Shizuo Fujita, Kentaro Kaneko, Takumi Ikenoue, Hiroshi Ito, Takuto Igawa, Jinchun Piao, Sam-Dong Lee, and Shigetaka Katori
    • Organizer
      2011 Materials Research Society Fall Meeting
    • Place of Presentation
      Boston (USA)
    • Year and Date
      2011-11-30
  • [Presentation] Solution-based vapor deposition of oxide and organic thin films2011

    • Author(s)
      Shizuo Fujita, Kentaro Kaneko, Takumi Ikenoue, Hiroshi Ito, Jinchun Piao, Sam-Dong Lee, and Shigetaka Katori
    • Organizer
      2nd Int. Conf. Green & Sustainable Chemistry
    • Place of Presentation
      Singapore
    • Year and Date
      2011-11-15
  • [Presentation] Strain relaxation at the interface resulting in high-quality α-Ga_2O_3layers on sapphire substrates2011

    • Author(s)
      Kentaro Kaneko and Shizuo Fujita
    • Organizer
      15th Int. Conf. Thin Films
    • Place of Presentation
      Kyoto (Japan)
    • Year and Date
      2011-11-08
  • [Presentation] Fabrication of α-(AlGa)_2O_3 thin films by ultrasonic atomization Mist-CVD2011

    • Author(s)
      Hiroshi Ito, Kentaro Kaneko, and Shizuo Fujita
    • Organizer
      5th Int. Conf. Thin Films
    • Place of Presentation
      Kyoto (Japan)
    • Year and Date
      2011-11-08
  • [Presentation] Solution-source vapor-phase synthesis of oxide and organic thin films2011

    • Author(s)
      Shizuo Fujita, Takumi Ikenoue, Kentaro Kaneko, Hiroshi Ito, Takuto Igawa, Jinchun Piao, Sam-Dong Lee, and Shigetaka Katori
    • Organizer
      organic thin films
    • Place of Presentation
      Shanghai (China)
    • Year and Date
      2011-10-17
  • [Presentation] Ferromagnetic properties of a-Fe_2O_3 and α-(GaFe)_2O_3thin films2011

    • Author(s)
      Kentaro Kaneko and Shizuo Fujita
    • Organizer
      European Materials Research Society 2011 Fall Meeting
    • Place of Presentation
      Warsaw (Poland)
    • Year and Date
      2011-09-19
  • [Presentation] TEM observation of α-(GaFe)_2O_3 and a-Al_2O_3 interface2011

    • Author(s)
      Kentaro Kaneko and Shizuo Fujita
    • Organizer
      European Materials Research Society 2011 Fall Meeting
    • Place of Presentation
      Warsaw (Poland)
    • Year and Date
      2011-09-19
  • [Presentation] 新規強磁性半導体α-Ga2O3 薄膜の磁気特性評価及び断面TEM 観察2011

    • Author(s)
      金子健太郎,伊藤大師,赤岩和明,鈴木規央,藤田静雄
    • Organizer
      2011 年秋季第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-08-31
  • [Presentation] 超音波噴霧ミストCVD法によるα-(AlGa)2O3薄膜作製2011

    • Author(s)
      伊藤大師,金子健太郎,藤田静雄
    • Organizer
      2011年秋季第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-08-31
  • [Presentation] Growth, characterization, and device applications of various oxide semiconductors2011

    • Author(s)
      Shizuo Fujita, Kentaro Kaneko, Takayoshi Oshima, Hiroshi Ito, Takumi Ikenoue, and Takuto Igawa
    • Organizer
      15th Int. Conf. II-VI Compounds
    • Place of Presentation
      Mayan Riviera (Mexico)
    • Year and Date
      2011-08-25
  • [Presentation] Mist deposition technique as a green-chemical-route for oxide thin films and nanostructures2011

    • Author(s)
      hizuo Fujita, Kentaro Kaneko, Yutaka Fukui, Taichi Nomura, Hiroshi Ito, Sam-Dong Lee, and Shigetaka Katori
    • Organizer
      International Conference on Materials and Advanced Technologies
    • Place of Presentation
      Singapore
    • Year and Date
      2011-06-27
  • [Presentation] Functional oxide semiconductors as green materials with green chemistry2011

    • Author(s)
      Shizuo Fujita, Kentaro Kaneko, Hiroshi Ito, Yutaka Fukui, and Taichi Nomura
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices
    • Place of Presentation
      Granada (Spain)
    • Year and Date
      2011-03-17
  • [Presentation] 超音波噴霧ミスト CVD 法による YSZ 基板上α-Ga_2O_3 薄膜の作製2011

    • Author(s)
      伊藤大師,金子健太郎,藤田静雄
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-09
  • [Presentation] c 面サファイア基板上β-Ga_2O_3 薄膜の断面および平面 TEM観察2011

    • Author(s)
      金子健太郎,藤田静雄
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-09
  • [Presentation] Characterization of corundumstructured Ga_2O_3 and Fe_2O_3 oxide semiconductor thin films2010

    • Author(s)
      Kentaro Kaneko and Shizuo Fujita
    • Organizer
      European Materials Research Society 2010 Fall Meeting
    • Place of Presentation
      Warsaw (Poland)
    • Year and Date
      2010-09-16
  • [Remarks]

    • URL

      http://pesec.t.kyoto-u.ac.jp/ematerial/

  • [Patent(Industrial Property Rights)] Ga_2O_3 系 HEMT2011

    • Inventor(s)
      佐々木 公平、 東脇正高、 藤田静雄、大友明、大島孝仁
    • Industrial Property Rights Holder
      (株)タムラ製作所、情報通信研究機構、京都大学、東京工業大学
    • Industrial Property Number
      特願 2011-196436
    • Filing Date
      2011-09-08
  • [Patent(Industrial Property Rights)] Ga_2O_3 系半導体素子2011

    • Inventor(s)
      佐々木 公平、東脇正高、藤田静雄
    • Industrial Property Rights Holder
      (株)タムラ製作所、情報通信研究機構、京都大学
    • Industrial Property Number
      特願 2011-196437
    • Filing Date
      2011-09-08
  • [Patent(Industrial Property Rights)] Ga_2O_3 系半導体素子2011

    • Inventor(s)
      佐々木 公平、東脇正高、藤田静雄
    • Industrial Property Rights Holder
      (株)タムラ製作所、情報通信研究機構、京都大学
    • Industrial Property Number
      特願 2011-196438
    • Filing Date
      2011-09-08
  • [Patent(Industrial Property Rights)] Ga_2O_3 系半導体素子2011

    • Inventor(s)
      佐々木 公平、東脇正高、藤田静雄
    • Industrial Property Rights Holder
      (株)タムラ製作所、情報通信研究機構、京都大学
    • Industrial Property Number
      特願 2011-196439
    • Filing Date
      2011-09-08

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Published: 2014-08-29  

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