2013 Fiscal Year Final Research Report
in situ micro-beam X-ray diffraction from epitaxially grown single nanostructures
| Project/Area Number |
22360010
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Japan Atomic Energy Agency |
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Principal Investigator |
TAKAHASI Masamitu 独立行政法人日本原子力研究開発機構, 原子力科学研究部門 量子ビーム応用研究センター, 研究主幹 (00354986)
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| Co-Investigator(Renkei-kenkyūsha) |
HU Wen 独立行政法人日本原子力研究開発機構, 原子力科学研究部門 量子ビーム応用研究センター, 博士研究員
KOZU Miwa 兵庫県立大学, 大学院・物質理学研究科, 大学院生
SASAKI Takuo 独立行政法人日本原子力研究開発機構, 原子力科学研究部門 量子ビーム応用研究センター, 任期付研究員
NAKATA Yuka 兵庫県立大学, 大学院・物質理学研究科, 大学院生
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| Project Period (FY) |
2010-04-01 – 2014-03-31
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| Keywords | マイクロX線回折 / ナノ構造 / エピタキシャル成長 |
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| Research Abstract |
Structural inhomogeneity is one of the issues in the self-organization of semiconductor nanostructures. To clarify the mechanism of structural inhomogeneity, we have developed an X-ray optics allowing for one-micron-focusing of X-rays at a synchrotron beamline designed for in situ X-ray diffraction during molecular-beam epitaxy. Through investigation of individual structures of semiconductor nanowires, micrometer-sized crystals of gallium arsenide grown on patterned silicon substrates and dislocations of indium gallium arsenide films by micro-beam X-ray diffraction under in situ conditions, we have obtained knowledge useful for the control of semiconductor nanostructures.
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