2012 Fiscal Year Final Research Report
Research on step-free heterostructures of nitride semiconductors
| Project/Area Number |
22360013
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | NTT Basic Research Laboratories |
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Principal Investigator |
AKASAKA Tetsuya 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主任研究員 (90393735)
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| Co-Investigator(Kenkyū-buntansha) |
GOTOH Hideki 日本電信電話株式会社NTT物性科学基礎研究所, 量子光物性研究部, 主幹研究員 (10393795)
KOBAYASHI Yasuyuki 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 (90393727)
KASU Makoto 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 (50393731)
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| Project Period (FY) |
2010 – 2012
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| Keywords | エピタキシャル成長 / 半導体物性 / 量子井戸 |
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| Research Abstract |
We have successfully fabricated step-free InN quantum wells (QWs) using our original growth technique in which completely flat surfaces without any monolayer steps of nitride semiconductors can be formed with the diameters larger than 16 micrometers. The step-free InN QWs are one monolayer thick and emit extremely sharp violet photoluminescence. High-efficiency green and red emissions will be theoretically obtained by controlling the thickness of step-free InN QWs.
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