2012 Fiscal Year Final Research Report
Theoretical Design of Non-volatile Memories based onHybrids of Magnets and Dielectrics
| Project/Area Number |
22360014
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
ODA Tatsuki 金沢大学, 数物科学系, 教授 (30272941)
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| Co-Investigator(Renkei-kenkyūsha) |
MIURA Yoshio 東北大学, 電気通信研究所, 助教 (10361198)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 不揮発性メモリ / 強磁性体 / 表面・界面 / 磁気異方性 / 電界効果 / 第一原理計算 |
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| Research Abstract |
We investigated the magneto-crystalline anisotropy (MCA) and its electric-field effect in ferromagnet/oxide films using first-principles calculations and explored structures which show remarkable electric-field effect to establish a data-rewriting based on electric-field induced magnetization reversal in non-volatile spin memories. We found that the interfacial MCA in CoFe/MgO junctions increases with increasing Fe composition. We suggested that the electric-field dependence of MCA at Fe/MgO interface can be enhanced by inserting Pt or Pd monatomic layers.
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[Journal Article] Interface atomic structures and magnetic anisotropy of Fe and Pd/Fe monatomic films on Pd(001)2012
Author(s)
T. Ueno, M. Sawada, K. Furumoto, T. Tagashira, S. Tohoda, A. Kimura, S. Haraguchi, M. Tsujikawa, T. Oda, H. Namatame, M. Taniguchi
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Journal Title
Physical Review B
Volume: 85巻
Pages: 224406/1-10
DOI
Peer Reviewed
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