Position- and structure-Control of Atomic Steps on Crystal Surfaces and Its Atom/Molecule Modification

2014 Fiscal Year Final Research Report

• Project/Area Number: 22360015
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: University of Tsukuba
• Principal Investigator: YAMABE Kikuo 筑波大学, 数理物質系, 教授 (10272171)
• Co-Investigator(Kenkyū-buntansha): HASUNUMA Ryu 筑波大学, 数理物質系, 准教授 (90372341)
• Project Period (FY): 2010-04-01 – 2015-03-31
• Keywords: シリコン / 単結晶 / 原子ステップ / 原子テラス / 平坦性 / ラフネス / 均一性

Outline of Final Research Achievements

Nano-scale electronic devices demand technologies which control fine structures at atomic level. At the same time, In order to clarify origins of various kinds of faults or develop their suppression technologies, it is important to more precisely understand the phenomena using well-defined atomically-controlled structures.
In this study, the well-defined structures with the atomic steps and atomically-flat terraces were formed by immersing the (111)-oriented, Si mono-crystal wafers in the ultralow-dissolved oxygen water. Controllability of the atomic step lines was studied as a kind of nanotechnology. In addition, correlating to reliability, two-dimensional distribution of the thermally grown SiO2 film thickness was investigated using the atomic terraces with ultimate flatness.

Free Research Field

半導体デバイスプロセス技術