2012 Fiscal Year Final Research Report
Far-lnfrared BIB Detector Fabrication by Wafer-Bonding Technique
| Project/Area Number |
22360025
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
DOI Yasuo 東京大学, 大学院・総合文化研究科, 助教 (70292844)
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| Co-Investigator(Kenkyū-buntansha) |
HIGURASHI Eiji 東京大学, 先端科学技術研究センター, 准教授 (60372405)
HOSAKO Iwao 情報通信研究機構, 新世代ネットワーク研究センター, 研究マネジャー (00359069)
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| Project Period (FY) |
2010 – 2012
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| Keywords | テラヘルツ / 遠赤外線 / ウェファボンディング / BIB検出器 |
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| Research Abstract |
The Ge extrinsic photoconductor are among the most sensitive as well aslarge-formatted array detectors that are sensitive to the tera-herts wavebands and thus areapplicable for may scientific and industrial measurements. We have developed Ge BIBphotoconductor detectors by utilising the wafer-bonding technique and have confirmed the feasibilityof the large-scale low-cost fabrication of the photoconductor detectors potentially be sensitive to100--300μmwavebands.
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[Journal Article] Wafer-bonded Ge:Ga blocked-impurity-band far-infrared detectors, Proceedings of Infセared Millimeter and Terahertz Waves(IRMMW-THz)2010
Author(s)
Sawayama, YりDoi, Y., Kurayama, R., Higurashi, E., Patrashin, M., Hosako,
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Journal Title
201035th International Conference on In-ared, Millimeter and Terahertz
Pages: 1-2
DOI
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