2012 Fiscal Year Final Research Report
Highly spin polarized quantum dots with long spin relaxation time for future circularly polarized light emitting diodes
| Project/Area Number |
22360032
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | Waseda University |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Keywords | 光制御 / スピントロニクス |
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| Research Abstract |
For the realization of the circularly polarized light emitting diode, spin polarizations and spin relaxation times of some III-V compound semiconductors were investigated. InAs columnar quantum dots showed 3.42 ns-spin relaxation at 1.06 micron meter. The highly uniform InAs quantum dots exhibited the stable eliptical polarization caused by the in-plane anisostropies of the dot shape and strain distribution. Highly Si doped GaInP showed 210 ns-spin relaxation which is one of the longest spin relaxations ever observed.
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