2012 Fiscal Year Final Research Report
Atomically-control of halfmetal/Si interface for spin-transistors
| Project/Area Number |
22360127
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
MIYAO Masanobu 九州大学, 大学院・システム情報科学研究院, 特任教授 (60315132)
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| Co-Investigator(Kenkyū-buntansha) |
SADOH Taizoh 九州大学, 大学院・システム情報科学研究院, 准教授研究者番号 (20274491)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 半導体 / Si 系スピントランジスタ / 次世代 LSI |
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| Research Abstract |
To achieve Si-based spin-transistors, a new epitaxial growth technique of half-metal on Si has been developed. Moreover, by optimizing the electrical transport properties at half-metal/Si interfaces, injection of spin-polarized electrons has been realized at room temperature.
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