2013 Fiscal Year Final Research Report
Approach from crystal growth to overcome limits of Si integrated circuits
| Project/Area Number |
22360131
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Meijo University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
MARUYAMA Takahiro 名城大学, 理工学部, 教授 (30282338)
KAMIYAMA Satoshi 名城大学, 理工学部, 教授 (10340291)
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| Project Period (FY) |
2010-04-01 – 2014-03-31
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| Keywords | 電気・電子材料 / MBEエピタキシャル / 窒化ガリウム / 格子欠陥 / 低角入射マイクロチャンネルエピタキシー / 有機金属分子線成長 / 選択成長 / グラフェンマスク |
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| Research Abstract |
In order to fabricate III-V channel MOSFET or GaN-based LED on Si substrates, low-angle incidence microchannel epitaxy (LAIMCE) was investigated. LAIMCE is useful to greatly reduce dislocations in the laterally grown areas using molecular beam epitaxy. A lateral growth of a-plane GaN more than 4um-wide was successfully grown by metal-organic molecular beam epitaxy using LAIMCE. No dislocation or defect was observed in the laterally grown area by TEM though a large number of dislocations, as large as 10 to the 10th power per square cm, exists in the GaN template substrate. Mask materials for selective growth or other important fundamental technologies for LAIMCE were also investigated.
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