2012 Fiscal Year Final Research Report
Realization of Long-wavelength Laser Transistor for New GenerationPhotonic Networks
| Project/Area Number |
22360138
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Keywords | 光デバイス / 光回路 |
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| Research Abstract |
Theoretical analysis and fabrication of a transistor laser (TL) using AlGaInAs quantum wells and a buried-hetero (BH) structure have been studied. First, the fabrication technology of the BH structure for AlGaInAs was studied and state-of-the-art AlGaInAs/InP-BH LDs were demonstrated. This technology enabled CW lasing operation of AlGaInAs TLs for the first time with the threshold emitter current of 38 mA. This TL showed output power control by base-collector voltage change.
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