2012 Fiscal Year Final Research Report
Establishment of nanocell fabrication on semiconductor surface utilizing self-organizational movement of point defects
Project/Area Number |
22360268
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Physical properties of metals
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Research Institution | Kochi University of Technology |
Principal Investigator |
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Co-Investigator(Kenkyū-buntansha) |
MAEDA Toshihiko 高知工科大学, 環境理工学群, 教授 (50399169)
XU Qiu 京都大学, 原子炉実験所, 准教授 (90273531)
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Co-Investigator(Renkei-kenkyūsha) |
NITTA Noriko 高知工科大学, ナノ, 講師 (80412443)
KANBE Hiroshi 高知工科大学, 名誉教授 (10299373)
YOSHIIE Toshimasa 京都大学, 原子炉実験所, 教授 (20124844)
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Project Period (FY) |
2010 – 2012
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Keywords | 格子欠陥 / 半導体 / イオン照射 / ボイド / ナノセル |
Research Abstract |
In several semiconductors, nano-scale cellular structure is formed on their surfaces by ion irradiation. We aimed to establish the novel nano-fabrication technique utilizing this astonishing phenomenon and investigated nanocell fabrication for GaSb, InSb and Ge. The cell lattice with 100 nm cell interval on InSb surface develops regularly without secondary void formation by irradiation at room temperature, however, the regularity is insufficient at lower temperature. GaSb reveal the inverse results, that is, the secondary voids are created at room temperature and the cell lattice development is better at lower temperature. Furthermore filling in the cells is tried.
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Research Products
(39 results)
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[Presentation] Optical property and crystallographical structure of metal doped TiO2 thin films fabricated by pulsed laser deposition2013
Author(s)
T . Nishiuchi, A. Sakamoto, N. Kawadu, M. Ikeuchi, K. Hayashi, H. Tomozawa, S. Kusuno, N. Nishimura, R. Kodama, N. Nitta, and M. Taniwaki
Organizer
Third International Conference on Multifunctional, Hybrid and Nanomaterials
Place of Presentation
Hilton Sorrento Palace Hotel, Sorremto, Italy
Year and Date
20130303-07
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