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2012 Fiscal Year Final Research Report

Establishment of nanocell fabrication on semiconductor surface utilizing self-organizational movement of point defects

Research Project

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Project/Area Number 22360268
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Physical properties of metals
Research InstitutionKochi University of Technology

Principal Investigator

TANIWAKI Masafumi  高知工科大学, 環境理工学群, 教授 (20133712)

Co-Investigator(Kenkyū-buntansha) MAEDA Toshihiko  高知工科大学, 環境理工学群, 教授 (50399169)
XU Qiu  京都大学, 原子炉実験所, 准教授 (90273531)
Co-Investigator(Renkei-kenkyūsha) NITTA Noriko  高知工科大学, ナノ, 講師 (80412443)
KANBE Hiroshi  高知工科大学, 名誉教授 (10299373)
YOSHIIE Toshimasa  京都大学, 原子炉実験所, 教授 (20124844)
Project Period (FY) 2010 – 2012
Keywords格子欠陥 / 半導体 / イオン照射 / ボイド / ナノセル
Research Abstract

In several semiconductors, nano-scale cellular structure is formed on their surfaces by ion irradiation. We aimed to establish the novel nano-fabrication technique utilizing this astonishing phenomenon and investigated nanocell fabrication for GaSb, InSb and Ge. The cell lattice with 100 nm cell interval on InSb surface develops regularly without secondary void formation by irradiation at room temperature, however, the regularity is insufficient at lower temperature. GaSb reveal the inverse results, that is, the secondary voids are created at room temperature and the cell lattice development is better at lower temperature. Furthermore filling in the cells is tried.

  • Research Products

    (39 results)

All 2013 2012 2011 2010

All Journal Article (17 results) (of which Peer Reviewed: 17 results) Presentation (22 results)

  • [Journal Article] イオン照射による半導体表面ナノ構造の形成2013

    • Author(s)
      新田紀子
    • Journal Title

      まてりあ

      Volume: 52 Pages: 166-172

    • Peer Reviewed
  • [Journal Article] 集束イオンビームによるゲルマニウム表面ナノセル構造の作製2013

    • Author(s)
      森田憲治, 新田紀子, 谷脇雅文
    • Journal Title

      日本金属学会誌

      Volume: 77 Pages: 64-69

    • Peer Reviewed
  • [Journal Article] Investigation of Wafer-Bonded InAs/Si Heterojunction by Transmission Electron Microscopy2013

    • Author(s)
      H. Kanbe, M. Tada, T. Kochigahama and M. Taniwaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Pages: 011201-011201-5

    • Peer Reviewed
  • [Journal Article] Beam flux dependence of ion-irradiation-induced porous structures in III -V compound semiconductors2013

    • Author(s)
      N. Nitta, T. Hasegawa, H. Yasuda, K. Sato, Q. Xu, T. Yoshiie, M. Taniwaki, and A. Hatta
    • Journal Title

      Radiation Effects and Defects in Solids

      Volume: 168 Pages: 247-252

    • Peer Reviewed
  • [Journal Article] Nanocell fabrication on GaSb at room temperature and cryogenic temperatur2012

    • Author(s)
      N. Nitta, K. Yokoyama and M. Taniwaki
    • Journal Title

      AIP Conf. Proc.

      Volume: 1496 Pages: 280-283

    • Peer Reviewed
  • [Journal Article] Nanocell fabrication on GaSb at room temperature and cryogenic temperature2012

    • Author(s)
      N. Nitta, K. Yokoyama, and M. Taniwaki
    • Journal Title

      AIP Conference Proceedings

      Volume: (accepted)

    • Peer Reviewed
  • [Journal Article] Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation2011

    • Author(s)
      K. Nakai, K. Hamada, Y. Satoh, T. Yoshiie
    • Journal Title

      Phil. Mag.

      Volume: 91(2011) Pages: 421-436

    • Peer Reviewed
  • [Journal Article] Nano-cell fabrication on InSb utilizing point defects behavior induced by focused ion beam2011

    • Author(s)
      S. Morita, N. Nitta and M. Taniwaki
    • Journal Title

      Ssurface and Cotings Technology

      Volume: 206 Pages: 792-796

    • Peer Reviewed
  • [Journal Article] Characteristics of ZnO wafers implanted with 60 keV Sn+ ions at room temperature and at 110 K2011

    • Author(s)
      K, G. T. Dang, T. Kawaharamura, T. Hirao, N. Nitta and M. Taniwaki
    • Journal Title

      AIP Conference Proceedings

      Volume: 1321 Pages: 270-273

    • Peer Reviewed
  • [Journal Article] Photoluminescence, morphology, and structure of hydrothermal ZnO implanted at room temperature with 60 keV Sn ions2011

    • Author(s)
      G. T. Dang, T. Kawaharamura, N. Nitta, T. Hirao, T. Yoshiie and M. Taniwaki
    • Journal Title

      TJ. Appl. Phys

      Volume: 109 Pages: 123516

    • Peer Reviewed
  • [Journal Article] Formation of defect dtructure on Ge surface by ion irradiation at controlled Substrate Temperature2011

    • Author(s)
      Nitta, T. Hasegawa, H. Yasuda, Y. Hayashi, T. Yoshiie and M. Taniwaki
    • Journal Title

      Materials Transactions

      Volume: 52 Pages: 127-129

    • Peer Reviewed
  • [Journal Article] Void formation and structure change induced by heavy ion irradiation in GaSb and InSb2011

    • Author(s)
      N. Nitta, T. Hasegawa, H. Yasuda, Y. Hayashi, T. Yoshiie and M. Taniwaki, and H. Mori
    • Journal Title

      Mater. Trans.

      Volume: 51 Pages: 1059-1063

    • Peer Reviewed
  • [Journal Article] Structural changes induced by low-energy electron irradiation in GaSb2011

    • Author(s)
      N. Nitta, Y. Aizawa, T. Hasegawa, and H. Yasuda
    • Journal Title

      Philosophical Magazine Letter

      Volume: 91 Pages: 10676-681

    • Peer Reviewed
  • [Journal Article] Secondary defects induced by ion and electron irradiation of GaSb2011

    • Author(s)
      N. Nitta, E. Taguchi, H. Yasuda, H. Mori, Y. Hayashi, T. Yoshiie and M. Taniwaki
    • Journal Title

      Phil. Mag. Lett.

      Volume: 91 Pages: 223-228

    • Peer Reviewed
  • [Journal Article] Fabrication of tetragonal and close-packed nano-cell two-dimensional lattices by Ga+ beam on InSb Surface2010

    • Author(s)
      K. Takahashi, O. Ishikawa, K. Yokoyama, M. Taniwaki, and N. Nitta
    • Journal Title

      AIP Conference Proceedings

      Volume: 1321 Pages: 282-285

    • Peer Reviewed
  • [Journal Article] Void formation and structure change induced by heavy ion irradiation in GaSb and InSb2010

    • Author(s)
      N. Nitta, T. Hasegawa, H. Yasuda, Y. Hayashi, T. Yoshiie, M. Taniwaki, and H. Mori
    • Journal Title

      Mater. Trans.

      Volume: 51 Pages: 1059-1063

    • Peer Reviewed
  • [Journal Article] Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Wafer Bonding2010

    • Author(s)
      H. Kanbe, M. Hirose, T. Ito and M. Taniwaki
    • Journal Title

      Journal of Electronic Materials

      Volume: Volume 39, Issue 8 Pages: 1248-1255

    • Peer Reviewed
  • [Presentation] イオン照射誘起化合物半導体ポーラス構造の加速電圧依存性2013

    • Author(s)
      新田紀子, 西内大貴, 谷脇雅文, 八田章光
    • Organizer
      日本金属学会第148回春期大会
    • Place of Presentation
      東京理科大学
    • Year and Date
      20130327-29
  • [Presentation] Fabrication of nano-cell structure on InSb surface filled with heterogeneous material2013

    • Author(s)
      K. Becchaku, N. Nitta, and M. Taniwaki
    • Organizer
      Third International Conference on Multifunctional, Hybrid and Nanomaterials
    • Place of Presentation
      Hilton Sorrento Palace Hotel, Sorremto, Italy
    • Year and Date
      20130303-07
  • [Presentation] Fabrication of Josephson-Junction utilizing nanocell on compound semiconductor GaSb2013

    • Author(s)
      K. Shigematsu, K. Becchaku, K. Morita, K. Yokoyama, N. Nitta, and M. Taniwaki
    • Organizer
      Third International Conference on Multifunctional, Hybrid and Nanomaterials
    • Place of Presentation
      Hilton Sorrento Palace Hotel, Sorremto, Italy
    • Year and Date
      20130303-07
  • [Presentation] Fabrication and characterization of environmentally conscionable semiconductor β-FeSi22013

    • Author(s)
      N. Nishioka, M. Okamoto, N. Nitta and M. Taniwaki
    • Organizer
      Third International Conference on Multifunctional, Hybrid and Nanomaterials
    • Place of Presentation
      Hilton Sorrento Palace Hotel, Sorremto, Italy
    • Year and Date
      20130303-07
  • [Presentation] Optical property and crystallographical structure of metal doped TiO2 thin films fabricated by pulsed laser deposition2013

    • Author(s)
      T . Nishiuchi, A. Sakamoto, N. Kawadu, M. Ikeuchi, K. Hayashi, H. Tomozawa, S. Kusuno, N. Nishimura, R. Kodama, N. Nitta, and M. Taniwaki
    • Organizer
      Third International Conference on Multifunctional, Hybrid and Nanomaterials
    • Place of Presentation
      Hilton Sorrento Palace Hotel, Sorremto, Italy
    • Year and Date
      20130303-07
  • [Presentation] Fabrication of ordered nano-cell structure on Ge surface by FIB2012

    • Author(s)
      K. Morita, N. Nitta and M. Taniwaki
    • Organizer
      25th International Conference on Atomic Collisions in Solids (ICACS25)
    • Place of Presentation
      Kyoto University, Kyoto, Japan
    • Year and Date
      20121021-25
  • [Presentation] 環境半導体β-FeSi2 薄膜の作製と評価2012

    • Author(s)
      西岡誠剛, 新田紀子, 谷脇雅文
    • Organizer
      日本金属学会第147回秋期大会
    • Place of Presentation
      愛媛大学
    • Year and Date
      20120917-19
  • [Presentation] 集束イオンビーム法によるGe 表面ナノセル構造の作製2012

    • Author(s)
      森田憲治, 新田紀子, 谷脇雅文
    • Organizer
      日本金属学会第147回秋期大会
    • Place of Presentation
      愛媛大学
    • Year and Date
      20120917-19
  • [Presentation] ジョセフソン接合のバリア層を指向したFIB によるGaSb 表面ナノセル構造の作製2012

    • Author(s)
      重松晃次, 別役和秀, 森田憲治, 横山和弘, 新田紀子, 谷脇雅文
    • Organizer
      日本金属学会第147回秋期大会
    • Place of Presentation
      愛媛大学
    • Year and Date
      20120917-19
  • [Presentation] 電子デバイスを目指した充填ナノセルの形成2012

    • Author(s)
      別役和秀, 中内和也, 西岡誠剛, 新田紀子, 谷脇雅文
    • Organizer
      日本金属学会第147回秋期大会
    • Place of Presentation
      愛媛大学
    • Year and Date
      20120917-19
  • [Presentation] Fabrication of nanocell lattice on semiconductor utilizing point defects movement induced by ion irradiation2012

    • Author(s)
      M. Taniwaki and N. Nitta
    • Organizer
      XI International Conference on Nanostructure Materials (Nano2012)
    • Place of Presentation
      Rodos Palace International Convention Center, Rodos, Greece
    • Year and Date
      20120826-31
  • [Presentation] Nano-cell fabrication on GaSb and InSb compound semiconductors by focused ion beam at room temperature2012

    • Author(s)
      M. Taniwaki, O. Ishikawa, K. Yokoyama and N. Nitta
    • Organizer
      19 th International Conference on Ion Implantation Technology (IIT 2012)
    • Place of Presentation
      Congress Center , Valladolid, Spain
    • Year and Date
      20120625-59
  • [Presentation] Characterization of hydrothermal bulk ZnO implanted at room temperature with 60 keV Sn+ ions2011

    • Author(s)
      Giang T. Dang, T. Kawaharamura, N. Nitta, T. Hirao, T. Yoshiie and M. Taniwaki
    • Organizer
      11th International Workshop on Plasma-Based Ion Implantation and Deposition (PBII&D 2011)
    • Place of Presentation
      Harbin (China)
    • Year and Date
      20110908-12
  • [Presentation] 集束イオンビーム法によるGaSb ナノセル構造の作製2011

    • Author(s)
      政本泰佑, 石川修, 森田憲治, 横山和弘,新田紀子, 谷脇雅文
    • Organizer
      日本金属学会第146回秋期大会
    • Place of Presentation
      沖縄コンベンションセンター
    • Year and Date
      2011-11-07
  • [Presentation] Evaluation of nano-cell lattice on semiconductor surface fabricated by FIB2011

    • Author(s)
      M.Taniwaki, O. Ishikawa, K. Yokoyama, K. Takahashi and N.Nitta
    • Organizer
      The 17th international conference on surface modification of materials by ion beams
    • Place of Presentation
      Harbin (China)
    • Year and Date
      2011-09-15
  • [Presentation] FIB によるInSb 表面ナノセル構造の作製2011

    • Author(s)
      石川修, 横山和弘, 高橋和之, 森田憲治,政本泰祐,新田紀子, 谷脇雅文
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18
  • [Presentation] 集束イオンビームによる化合物半導体GaSb セル構造の制御2011

    • Author(s)
      横山和弘, 高橋和之, 森田憲治石川修,政本泰佑, 新田紀子, 谷脇雅文
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18
  • [Presentation] レーザーアブレーション法によるFe-Si系半導体薄膜の作製と分析2011

    • Author(s)
      横田正博,山本知起 新田紀子, 谷脇雅文
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18
  • [Presentation] 集束イオンビーム によるInSb 表面ナノセル構造 の作製2011

    • Author(s)
      石川 修 横山和弘 谷脇雅文
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18
  • [Presentation] FIBによる化合物半導体GaSb表面微細構造の作製2011

    • Author(s)
      横山和弘 石川 修 高橋和之 谷脇雅文
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18
  • [Presentation] Photoluminescence mechanisms of an Al0.5Ga0.5As/GaAs multiple quantum well in the temperature range from 5 K to 296 K2011

    • Author(s)
      Giang T. Dang, Hiroshi Kanbe and Masafumi Taniwaki
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18
  • [Presentation] 不純物ドープしたTiO2の構造と光学特性2011

    • Author(s)
      谷脇雅文 河津直紀
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18

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Published: 2014-08-29  

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