Oxygen vacancy induced changes in electronic properties and electric field control of transport properties in correlated electron oxides

2012 Fiscal Year Final Research Report

• Project/Area Number: 22360280
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Inorganic materials/Physical properties
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: SAWA Akihito 独立行政法人産業技術総合研究所, 電子光技術研究部門, 研究グループ長 (10357171)
• Co-Investigator(Renkei-kenkyūsha): YAMADA Hiroyuki 独立行政法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (00415762) ; INOUE Isao 独立行政法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (00356502)
• Project Period (FY): 2010 – 2012
• Keywords: 表面・界面 / 強相関エレクトロニクス / セラミックス

Research Abstract

From the cell-area dependence of the resistive switching properties in Pt/Nb-doped SrTiO_3memory cells, we found that the electromigration of oxygen vacancy occurs mainly at the edge of the memory cell. In order to realize the electric-field control of tr

Research Products

• [Journal Article] Electrolyte-Gated SmCoO_3Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature (2013)
  • Author(s): P.-H. Xiang, S. Asanuma, H. Yamada, H.Sato, I. H. Inoue, H. Akoh, A. Sawa, M.Kawasaki, and Y.Iwasa
  • Journal Title: Advanced Materials Volume: 25 Pages: 2158-2161
  • DOI: DOI:10.1002/adma.201204505
• [Journal Article] Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p-Type Schottky-Like Pt/Bi_<1->FeO_3 Interfaces (2012)
  • Author(s): A. Tsurumaki, H. Yamada, and A. Sawa
  • Journal Title: Advanced Functional Materials Volume: 22 Pages: 1040-1047
  • DOI: DOI:10.1002/adfm.201102883
• [Journal Article] Strain-Mediated Phase Control and Electrolyte-Gating in Electron-Doped Manganites (2011)
  • Author(s): P.-H. Xiang, S. Asanuma, H. Yamada, I. H. Inoue, H. Sato, H. Akoh, A. Sawa, K. Ueno, H. Yuan, H. Shimotani, M. Kawasaki, and Y. Iwasa
  • Journal Title: Advanced Materials Volume: 23 Pages: 5822-5827
  • DOI: DOI:10.1002/adma.201102968
• [Journal Article] Tuning of the metal-insulator transition in electrolyte-gated NdNiO_3 thin films (2010)
  • Author(s): S. Asanuma, P.-H. Xiang, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, A. Sawa, K. Ueno, H. Shimotani, H. Yuan, M. Kawasaki, and Y. Iwasa
  • Journal Title: Applied Physics Letters Volume: 97 Pages: 142110-1-3
  • DOI: DOI:10.1063/1.3496458
• [Presentation] Resistive switching memory consisting of ferroelectric oxides (2012)
  • Author(s): A. Sawa, A. Tsurumaki-Fukuchi, and H. Yamada
  • Organizer: New Non-Volatile Memory Workshop 2012
  • Place of Presentation: Hsinchu, Taiwan
  • Year and Date: 2012-11-15
• [Presentation] Resistance Change Memory consisting of ferroelectric oxides (2012)
  • Author(s): A. Sawa, A. Tsurumaki-Fukuchi, and H. Yamada
  • Organizer: 9th International Symposium on Advanced Gate Stack Technology
  • Place of Presentation: Saratoga Spring, NY, USA
  • Year and Date: 2012-10-04
• [Presentation] Ferroelectric Resistive Switching at Schottky-like BiFeO3 interfaces (2012)
  • Author(s): A. Sawa, A. Tsurumaki-Fukuchi, and H. Yamada
  • Organizer: Nature Conference "Frontiers in Electronic Materials"
  • Place of Presentation: Aachen, Germany
  • Year and Date: 2012-06-20
• [Presentation] mpacts of Oxygen Vacancy on Band Diagrams and Resistive Switching in Preovskite-Oxide Junctions (2010)
  • Author(s): A. Sawa
  • Organizer: International Symposium on Integrated Functionalities (ISIF)
  • Place of Presentation: San Juan, Puerto Rico
  • Year and Date: 20100613-16