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2012 Fiscal Year Final Research Report

Oxygen vacancy induced changes in electronic properties and electric field control of transport properties in correlated electron oxides

Research Project

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Project/Area Number 22360280
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Inorganic materials/Physical properties
Research InstitutionNational Institute of Advanced Industrial Science and Technology

Principal Investigator

SAWA Akihito  独立行政法人産業技術総合研究所, 電子光技術研究部門, 研究グループ長 (10357171)

Co-Investigator(Renkei-kenkyūsha) YAMADA Hiroyuki  独立行政法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (00415762)
INOUE Isao  独立行政法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (00356502)
Project Period (FY) 2010 – 2012
Keywords表面・界面 / 強相関エレクトロニクス / セラミックス
Research Abstract

From the cell-area dependence of the resistive switching properties in Pt/Nb-doped SrTiO_3memory cells, we found that the electromigration of oxygen vacancy occurs mainly at the edge of the memory cell. In order to realize the electric-field control of tr

  • Research Products

    (8 results)

All 2013 2012 2011 2010

All Journal Article (4 results) Presentation (4 results)

  • [Journal Article] Electrolyte-Gated SmCoO_3Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature2013

    • Author(s)
      P.-H. Xiang, S. Asanuma, H. Yamada, H.Sato, I. H. Inoue, H. Akoh, A. Sawa, M.Kawasaki, and Y.Iwasa
    • Journal Title

      Advanced Materials

      Volume: 25 Pages: 2158-2161

    • DOI

      DOI:10.1002/adma.201204505

  • [Journal Article] Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p-Type Schottky-Like Pt/Bi_<1->FeO_3 Interfaces2012

    • Author(s)
      A. Tsurumaki, H. Yamada, and A. Sawa
    • Journal Title

      Advanced Functional Materials

      Volume: 22 Pages: 1040-1047

    • DOI

      DOI:10.1002/adfm.201102883

  • [Journal Article] Strain-Mediated Phase Control and Electrolyte-Gating in Electron-Doped Manganites2011

    • Author(s)
      P.-H. Xiang, S. Asanuma, H. Yamada, I. H. Inoue, H. Sato, H. Akoh, A. Sawa, K. Ueno, H. Yuan, H. Shimotani, M. Kawasaki, and Y. Iwasa
    • Journal Title

      Advanced Materials

      Volume: 23 Pages: 5822-5827

    • DOI

      DOI:10.1002/adma.201102968

  • [Journal Article] Tuning of the metal-insulator transition in electrolyte-gated NdNiO_3 thin films2010

    • Author(s)
      S. Asanuma, P.-H. Xiang, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, A. Sawa, K. Ueno, H. Shimotani, H. Yuan, M. Kawasaki, and Y. Iwasa
    • Journal Title

      Applied Physics Letters

      Volume: 97 Pages: 142110-1-3

    • DOI

      DOI:10.1063/1.3496458

  • [Presentation] Resistive switching memory consisting of ferroelectric oxides2012

    • Author(s)
      A. Sawa, A. Tsurumaki-Fukuchi, and H. Yamada
    • Organizer
      New Non-Volatile Memory Workshop 2012
    • Place of Presentation
      Hsinchu, Taiwan
    • Year and Date
      2012-11-15
  • [Presentation] Resistance Change Memory consisting of ferroelectric oxides2012

    • Author(s)
      A. Sawa, A. Tsurumaki-Fukuchi, and H. Yamada
    • Organizer
      9th International Symposium on Advanced Gate Stack Technology
    • Place of Presentation
      Saratoga Spring, NY, USA
    • Year and Date
      2012-10-04
  • [Presentation] Ferroelectric Resistive Switching at Schottky-like BiFeO3 interfaces2012

    • Author(s)
      A. Sawa, A. Tsurumaki-Fukuchi, and H. Yamada
    • Organizer
      Nature Conference "Frontiers in Electronic Materials"
    • Place of Presentation
      Aachen, Germany
    • Year and Date
      2012-06-20
  • [Presentation] mpacts of Oxygen Vacancy on Band Diagrams and Resistive Switching in Preovskite-Oxide Junctions2010

    • Author(s)
      A. Sawa
    • Organizer
      International Symposium on Integrated Functionalities (ISIF)
    • Place of Presentation
      San Juan, Puerto Rico
    • Year and Date
      20100613-16

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Published: 2014-08-29  

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