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2013 Fiscal Year Final Research Report

Anisotropy of subband structure of Si and Ge surface inversion layers and control of its physical properties by means of strain

Research Project

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Project/Area Number 22540332
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Condensed matter physics I
Research InstitutionUniversity of the Ryukyus

Principal Investigator

INAOKA Takeshi  琉球大学, 理学部, 教授 (40184709)

Co-Investigator(Kenkyū-buntansha) TAKEDA Sakura  奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 (30314537)
柳澤 将  琉球大学, 理学部, 助教 (10403007)
Project Period (FY) 2010-04-01 – 2014-03-31
KeywordsSi, Ge / バンド / 異方性 / 歪み / 表面反転層 / 表面・界面物性 / 半導体物性
Research Abstract

Band anisotropy of Si and Ge and applied tensile or compressive strain with various orientations cooperate synergistically to change the band structure remarkably. As for the Si valence band, we have investigated the anisotropy of the bulk band or the surface subband induced by strain, and searched for those strain types which contribute to improve hole mobility. Furthermore, we have clarified the conspicuous effect of relative atom displacement of two atoms in the crystal unit cell (internal strain) on the band structure.
We have found the direction of uniaxial tensility and the plane orientation of biaxial tensility which cause the indirect-direct band-gap transition of Ge, and evaluated the strain magnitude where the transition occurs.
Observing the Si valence band by angle-resolved photoemission spectroscopy, we have found that biaxial tensility lifts up the band with a small in-plane hole effective mass to the valence top.

  • Research Products

    (35 results)

All 2014 2013 2012 2011 2010 Other

All Journal Article (11 results) (of which Peer Reviewed: 11 results) Presentation (22 results) (of which Invited: 1 results) Remarks (2 results)

  • [Journal Article] Internal-strain effect on the valence band of strained silicon and its correlation with the bond angles2014

    • Author(s)
      T. Inaoka, S. Yanagisawa, and Y. Kadekawa
    • Journal Title

      Journal of Applied Physics

      Volume: Vol.115, 063702 Pages: 14

    • DOI

      10.1063/1.4864217

    • Peer Reviewed
  • [Journal Article] Exchange-correlation and temperature effects on plasmons in strongly-correlated two-dimensional electron systems : Finite-temperature local-field-correction theory combined with angle-resolved Raman spectroscopy2014

    • Author(s)
      T. Inaoka, Y. Sugiyama, and K. Sato
    • Journal Title

      Physica Status Solidi B

      Volume: Vol.251, no.5 Pages: 980-990

    • DOI

      10.1002/pssb.201350147

    • Peer Reviewed
  • [Journal Article] Lattice distortion of porous Si by Li absorption using two-dimensional photoelectron diffraction2014

    • Author(s)
      E. S. A. Nouh, S. N. Takeda, F. Matsui, K. Hattori, T. Sakata, N. Maejima, H. Matsui, H. Matsuda, T. Matsushita, L. Tóth, M. Morita, S. Kitagawa, R. Ishii, M. Fujita, K. Yasuda, and H. Daimon
    • Journal Title

      Journal of Materials Science

      Volume: 49 Pages: 35-42

    • DOI

      10.1007/s10853-013-7799-2

    • Peer Reviewed
  • [Journal Article] System to measure accurate temperature dependence of electric conductivity down to 20 K in ultrahigh vacuum2013

    • Author(s)
      C. Sakai, S. N. Takeda, and H. Daimon
    • Journal Title

      Review of Scientific Instruments

      Volume: 84, 075103 Pages: 6

    • DOI

      10.1063/1.4812336

    • Peer Reviewed
  • [Journal Article] Anisotropy of the silicon valence band induced by strain with various orientations2013

    • Author(s)
      T. Inaoka, Y. Kinjyo, S. Yanagisawa, and K. Tomori
    • Journal Title

      Journal of Applied Physics

      Volume: Vol.113, 183718 Pages: 13

    • DOI

      10.1063/1.4804412

    • Peer Reviewed
  • [Journal Article] Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface : LDF calculation combined with high-resolution photoelectron spectroscopy2012

    • Author(s)
      T. Inaoka, Y. Sanuki, and M. Shoji
    • Journal Title

      AIP Advances

      Volume: Vol.2, 042149 Pages: 14

    • DOI

      10.1063/1.4768671

    • Peer Reviewed
  • [Journal Article] Real-space mapping of a disordered two-dimensional electron system in the quantum Hall regime2011

    • Author(s)
      K. Hashimoto, J. Wiebe, T. Inaoka, Y. Hirayama, R. Wiesendanger, and M. Morgenstern
    • Journal Title

      Journal of Physics : Conference Series

      Volume: Vol.334, 012008 Pages: 6

    • DOI

      10.1088/1742-6596/334/1/012008

    • Peer Reviewed
  • [Journal Article] Plasmons in Pb nanowire arrays on Si(557): Between one and two dimensions2011

    • Author(s)
      T. Block, C. Tegenkamp, J. Baringhaus, H. Pfnür, and T. Inaoka
    • Journal Title

      Physical Review B

      Volume: Vol.84, no.20, 205402 Pages: 8

    • DOI

      10.1103/PhysRevB.84.205402

    • Peer Reviewed
  • [Journal Article] Formation of step-state bands on Si(111)√3 ×√3-Ag vicinal surfaces2011

    • Author(s)
      H. Minoda, H. Yazawa, M. Morita, S. N. Takeda, and H. Daimon
    • Journal Title

      Physical Review B

      Volume: Vol.83 no.3 , 035419 Pages: 7

    • DOI

      10.1103/PhysRevB.83.035419

    • Peer Reviewed
  • [Journal Article] Effect of surface carrier concentration on valence subbands in Si(111) p-type inversion layers : Angle-resolved photoemission spectroscopy2010

    • Author(s)
      S. N. Takeda, N. Higashi, and H. Daimon
    • Journal Title

      Physical Review B

      Volume: Vol.82, no.3, 035318 Pages: 5

    • DOI

      10.1103/PhysRevB.82.035318

    • Peer Reviewed
  • [Journal Article] One-dimensional plasmons in ultrathin metallic silicide wires of finite width2010

    • Author(s)
      E. P. Rugeramigabo, C. Tegenkamp, H. Pfnür, T. Inaoka, and T. Nagao
    • Journal Title

      Physical Review B

      Volume: Vol.81, no.16, 165407 Pages: 5

    • DOI

      10.1103/PhysRevB.81.165407

    • Peer Reviewed
  • [Presentation] 伸長歪みによるGeの間接-直接バンドギャップ転移2014

    • Author(s)
      稲岡毅,古川琢朗,當間涼,柳澤将
    • Organizer
      日本物理学会第69回年次大会
    • Place of Presentation
      東海大学湘南キャンパス、神奈川県平塚市
    • Year and Date
      2014-03-28
  • [Presentation] 亜鉛フタロシアニン結晶の電子状態の理論的研究:結晶構造・バンド構造に対する分散力の影響2014

    • Author(s)
      柳澤将,稲岡毅,山内邦彦,小口多美夫,濱田幾太郎
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス、神奈川県相模原市
    • Year and Date
      2014-03-19
  • [Presentation] 高分解能角度分解光電子分光法によるGe(100)表面近傍のバンド構造の解明2014

    • Author(s)
      坂田智裕、武田さくら、Artoni Kevin Roquero Ang、北川幸佑、久米田晴香、小久井一樹、竹内克行、中尾敏臣、桃野浩樹、前田昂平、大門寛
    • Organizer
      ゲートスタック研究会-材料・プロセス・評価の物理-(第19回)
    • Place of Presentation
      ニューウェルシティ湯河原、神奈川県熱海市(服部賞受賞)
    • Year and Date
      2014-01-24
  • [Presentation] Electronic structure on Pb-adsorbed Ge(001)2014

    • Author(s)
      T. Sakata, S. N. Takeda, A. K. R. Ang, K. Kitagawa, H. Kumeda, K. Kokui, H. Nakao, K. Takeuchi, H. Momono, K. Maeda, H. Daimon
    • Organizer
      Symposium on Surface and Nano Science 2014
    • Place of Presentation
      新富良野プリンスホテル、北海道富良野市
    • Year and Date
      2014-01-16
  • [Presentation] Raman spectroscopy on uni-axially strained silicon2014

    • Author(s)
      S. N. Takeda, H. Kumeda, K. Maeda, H. Momono, K. Takeuchi, H. Nakao, K. Kitagawa, T. Sakata, A. K. R. Ang, and H. Daimon
    • Organizer
      Symposium on Surface and Nano Science 2014
    • Place of Presentation
      新富良野プリンスホテル、北海道富良野市
    • Year and Date
      2014-01-16
  • [Presentation] 歪み量測定用UHVラマン装置の構築2013

    • Author(s)
      久米田晴香,武田さくら,坂田智裕,北川幸祐,小久井一樹,竹内克行,中尾敏臣,前田昂平,桃野浩樹,大門寛
    • Organizer
      2013年真空・表面科学合同講演会
    • Place of Presentation
      つくば国際会議場、つくば市
    • Year and Date
      2013-11-27
  • [Presentation] 超薄膜Silicon on Insulator(SOI)の表面構造と電子状態2013

    • Author(s)
      小久井一樹,武田さくら,坂田智裕,北川幸祐,久米田晴香,大門寛
    • Organizer
      日本物理学会2013年秋季大会
    • Place of Presentation
      徳島大学、徳島市
    • Year and Date
      2013-09-27
  • [Presentation] シリコン価電子帯に及ぼす内部歪みの効果2013

    • Author(s)
      稲岡毅、柳澤将,嘉手川千央
    • Organizer
      日本物理学会2013年秋季大会
    • Place of Presentation
      徳島大学、徳島市
    • Year and Date
      2013-09-26
  • [Presentation] Effect of indium deposition on the hole subband of Si(111) surface2013

    • Author(s)
      N. I. Ayob, S. N. Takeda, M. Morita, T. Sakata, and H. Daimon
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      同志社大学、京都府京田辺市
    • Year and Date
      2013-09-19
  • [Presentation] 歪み印加マニピュレータの開発2013

    • Author(s)
      武田さくら,坂田智裕,山谷寛,Nur Idayu Ayob,北川幸祐,小久井一樹,久米田晴香,谷川洋平,大門寛
    • Organizer
      日本物理学会第68回年次大会
    • Place of Presentation
      広島大学、東広島市
    • Year and Date
      2013-03-28
  • [Presentation] シリコンバンド構造の異方性と歪みの効果II2013

    • Author(s)
      稲岡毅、金城悠希、柳澤将
    • Organizer
      日本物理学会第68回年次大会
    • Place of Presentation
      広島大学、東広島市
    • Year and Date
      2013-03-27
  • [Presentation] Initial stage of metal adsorption on Si(111) : Real time monitoring by RHEED2013

    • Author(s)
      S. N. Takeda, Y. Ohnishi, Y. Tanaka, S. Yasui, K. Matsuta, K. Shima, H. Daimon
    • Organizer
      Symposium on Surface and Nanoscience 2013 (SSNS'13)
    • Place of Presentation
      Zao, Yamagata
    • Year and Date
      2013-01-17
    • Invited
  • [Presentation] ARPES measurement of valence band structure in strained silicon2012

    • Author(s)
      S. N. Takeda, H. Tabata, T. Sakata, N. I. Ayob, N. Maejima, H. Matsuoka, H. Daimon, T. Inaoka, T. Tezuka, T. Katayama, and M. Yoshimaru
    • Organizer
      12th International Conference on Electron Spectroscopy and Structure (ICESS-12)
    • Place of Presentation
      Saint Malo, France
    • Year and Date
      2012-09-20
  • [Presentation] ゲルマニウムバンド構造に及ぼす歪みの効果2012

    • Author(s)
      稲岡毅、田中春奈、柳澤将
    • Organizer
      日本物理学会2012年秋季大会
    • Place of Presentation
      横浜国立大学、横浜市
    • Year and Date
      2012-09-18
  • [Presentation] Effect of biaxial tensile strain on silicon valence band dispersion2012

    • Author(s)
      S. N. Takeda, H. Tabata, T. Sakata, N. I. Ayob, N. Maejima, H. Matsuoka, T. Inaoka, K. Arima, T. Tezuka, T. Katayama, M. Yoshimaru, T. Imamura, and H. Daimon
    • Organizer
      31st International Conference on the Physics of Semiconductors (ICPS 2012)
    • Place of Presentation
      Zurich, Switzerland
    • Year and Date
      2012-08-02
  • [Presentation] シリコンの伝導帯、間接バンドギャップに及ぼす歪みの効果2011

    • Author(s)
      稲岡毅、喜舎場英吾、友利和也
    • Organizer
      日本物理学会2011年秋季大会
    • Place of Presentation
      富山大学、富山市
    • Year and Date
      2011-09-23
  • [Presentation] Si(110)表面反転層ホールサブバンドの構造:歪みの効果2011

    • Author(s)
      松川憲司、稲岡毅
    • Organizer
      日本物理学会2011年秋季大会
    • Place of Presentation
      富山大学、富山市
    • Year and Date
      2011-09-23
  • [Presentation] 歪みシリコンの価電子帯分散構造の実験的解明2011

    • Author(s)
      武田さくら、田畑裕貴、坂田智裕、Nur Idayu Ayob、有馬健太、澤野憲太郎、稲岡毅、手塚勉、片山俊治、吉丸正樹、今村健、大門寛
    • Organizer
      日本物理学会2011年秋季大会
    • Place of Presentation
      富山大学、富山市
    • Year and Date
      2011-09-22
  • [Presentation] シリコンの価電子帯分散構造の2軸引っぱり歪みによる変化2011

    • Author(s)
      武田さくら、田畑裕貴、坂田智裕、アヨブヌルイダユ、前島尚行、松岡弘憲、稲岡毅、有馬健太、澤野憲太郎、手塚勉、片山俊治、吉丸正樹、今村健、大門寛
    • Organizer
      2011年秋季第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学、山形市
    • Year and Date
      2011-09-01
  • [Presentation] 高分解能角度分解光電子分光による高不純物濃度Pb/Si(001)のホールサブバンド測定2011

    • Author(s)
      田畑裕貴、武田さくら、森田誠、松岡弘憲、吉丸正樹、大門寛
    • Organizer
      日本物理学会第66回年次大会
    • Place of Presentation
      (当初予定は新潟大学、新潟市、震災のため、概要集と資料公開サイト)
    • Year and Date
      2011-03-08
  • [Presentation] Si(001)表面反転層ホールサブバンドの構造:歪みの効果2010

    • Author(s)
      稲岡毅、松川憲司
    • Organizer
      日本物理学会2010年秋季大会
    • Place of Presentation
      大阪府立大学、堺市
    • Year and Date
      2010-09-24
  • [Presentation] Si(110)p型反転層中のサブバンドの分散構造2010

    • Author(s)
      武田さくら、山中佑一郎、田畑裕貴、松岡弘憲、森田誠、大門寛、吉丸正樹
    • Organizer
      日本物理学会2010年秋季大会
    • Place of Presentation
      大阪府立大学、堺市
    • Year and Date
      2010-09-23
  • [Remarks] 稲岡・柳澤 表面・界面物性研究室の紹介(物理系研究室一覧をクリック)

    • URL

      http://www.phys.u-ryukyu.ac.jp/wiki/

  • [Remarks] 武田 凝縮系物性学研究室の総合サイト

    • URL

      http://mswebs.naist.jp/LABs/daimon/index-j.html

URL: 

Published: 2015-07-16  

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