2012 Fiscal Year Final Research Report
Study on band-controlled semiconductor photocatalysts based on anion-doping in Fe- or Cu-based oxides
| Project/Area Number |
22550188
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Inorganic industrial materials
|
|---|
| Research Institution | Toyota Central R&D Lab., Inc. |
|---|
Principal Investigator |
MORIKAWA Takeshi 株式会社豊田中央研究所, 先端研究センター 光エネルギー貯蔵プログラム, 主席研究員 (70394666)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
ARAI Takeo 株式会社豊田中央研究所, 光エネルギー貯蔵プログラム, 研究員 (70375145)
|
|---|
| Project Period (FY) |
2010 – 2012
|
| Keywords | p 型半導体 / スパッタリング / 光触媒 / 酸化鉄 / 酸化銅 / 光電流 |
|---|
| Research Abstract |
A p-type N-doped α-Fe_2O_3 was developed by magnetron sputtering of a Fe_2O_3 target in a plasma containing N2 and Ar, followed by postannealing. Photoelectrochemical measurement under visible light irradiation showed that N- Fe_2O_3 exhibits a typical cathodic photocurrent originated from the p-type conduction. Furthermore, the photoactivity was enhanced by codoping of Zn. N,Zn-codoped Fe_2O_3, a p-type semiconductor with a band gap of 2.0 eV, was developed by cosputtering of Fe_2O_3 and ZnO in a plasma mixture of N_2 and Ar, followed by post-annealing. N,Zn- Fe_2O_3 showed a very high photocurrent, most likely originating from a higher concentration of acceptors than those of N- and Zn- Fe_2O_3.
|
Research Products
(9 results)
