Development of selective heating method using microwave plasmaexcited species

2012 Fiscal Year Final Research Report

• Project/Area Number: 22560007
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: University of Yamanashi
• Principal Investigator: NAKAGAWA Kiyokazu 山梨大学, 大学院・医学工学総合研究部, 教授 (40324181)
• Co-Investigator(Kenkyū-buntansha): YAMANAKA Junji 山梨大学, 学工学総合研究部, 准教授 (20293441) ; SATO Tetsuya 山梨大学, 学工学総合研究部, 准教授 (60252011)
• Project Period (FY): 2010 – 2012
• Keywords: 半導体 / 固相成長 / プラズマ加熱 / 選択加熱 / 薄膜トランジスタ

Research Abstract

We have performed technology development to enable the selectiveand rapid heating of Ge and the transition metals using irradiation of hydrogen atoms formedby microwave excitation. We confirmed polycrystallization of amorphous Ge films depositedon glass substrates by the hydrogen atoms irradiation of around 60 seconds. In the caseof amorphous Si films which were confirmed not to be heated with hydrogen atoms, wedeposited tungsten atoms on parts of the amorphous Si films and performedpolycrystallization of the films by the lateral solid-phase growth. We have fabricatedfield effect transistors on the polycrystalline films and realized effectiveness mobilityof ～40 cm2/Vs.

Research Products

• [Presentation] 水素ラジカルによる遷移金属の選択加熱現象を利用した多結晶 Si形成技術とデバイスへの応用 (2013)
  • Author(s): 中家大希、 荒井哲司、 大平隆裕、 有元圭介、山中淳二、佐藤哲也、中川清和、高松利行、澤野憲太郎、白木靖寛
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2013-03-27
• [Presentation] 高密度プラズマ形成技術とそのデバイス応用 (2012)
  • Author(s): 荒井哲司、池田礼隆、有元圭介、山中淳二、佐藤哲也、高松利行、中川清和
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
  • Year and Date: 2012-09-13
• [Presentation] 水素ラジカルによる選択過熱現象を利用した Si1-xGex 薄膜形成技術 (2012)
  • Author(s): 荒井哲司、川口裕樹、中村浩之、有元圭介、山中淳二、佐藤哲也、中川清和、高松利行、澤野憲太郎、星裕介、白木靖寛
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-16
• [Presentation] Selective Heating Method forPoly-crystallization of Amorphous Si UsingHydrogen Microwave Plasma (2011)
  • Author(s): T. Arai, H. Nakamura, S. Ariizumi, A.Ashizawa, T. Takamatsu, K. Arimoto, J.Yamanaka, T. Sato, K. Nakagawa, K. Sawano,Y. Shiraki
  • Organizer: The 5th AsianConference on Crystal Growth and CrystalTechnology
  • Place of Presentation: Singapore
  • Year and Date: 2011-06-28
• [Remarks]
  • URL: http://www.inorg.yamanashi.ac.jp/ccst/laboratories/nakagawa-lab/index.htm