2012 Fiscal Year Final Research Report
Study of Optical Irradiation on Nobel Materials and Quantum DotStructures for Next Generation Optical Devices
| Project/Area Number |
22560012
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kanazawa Institute of Technology |
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Principal Investigator |
UEDA Osamu 金沢工業大学, 工学研究科, 教授 (50418076)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAGUCHI Atsushi 金沢工業大学, 工学部, 教授 (60449428)
SAKUMA Yoshiki 独立行政法人物質・材料研究機構, 先端フォトニクス材料ユニット, グループリーダー (60354346)
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| Co-Investigator(Renkei-kenkyūsha) |
GONOKAMI Makoto 東京大学, 大学院・工学研究科, 教授 (70161809)
YOSHIMOTO Masahiro 京都工芸繊維大学, 工芸科学研究科, 教授 (20210776)
YAGUCHI Hiroyuki 埼玉大学, 大学院・理工学研究科, 教授 (50239737)
IKENAGA Noriaki 金沢工業大学, ものづくり研究所, 講師 (30512371)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 発光デバイス / 量子ドット / 信頼性 / 劣化 / 結晶成長 / 格子欠陥 / 転位 / 電子顕微鏡 |
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| Research Abstract |
In order to clarify the mechanism of gradual degradation of optical devices, degree of degradation under optical irradiation was evaluated for materials for next generation optical devices and quantum dot structure. It was clarified that striking degradation phenomenon is observed in GaInNAs. However, no definite degradation phenomena have been confirmed for InGaN and AlInGaAs. The InAs quantum dot structure did not show any degradation under comparatively strong optical irradiation. It is required to carry out the similar experiment for practical device structures.
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