2012 Fiscal Year Final Research Report
High quality Quantum Dots for 1.55 micron wavelength on GaAs substrate
| Project/Area Number |
22560016
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
SUGIMOTO Yoshimasa 独立行政法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主席研究員 (60415784)
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| Co-Investigator(Kenkyū-buntansha) |
MANO Takaaki 独立行政法人物質・ 材料研究機構, 主任研究員 (60391215)
OZAKI Nobuhiko 和歌山大学, システム工学部精密物質学科, 准教授 (30344873)
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| Project Period (FY) |
2010 – 2012
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| Keywords | エピタキシャル成長 / 量子ドット(QD) |
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| Research Abstract |
Extensions of emission wavelength of InAs/GaAs QDs by using bi-layer QD growth have been investigated. The extension has been found with an enlargement of the upper layer (active) QDs occurred by optimizing several growth parameters: growth temperature of lower (seed) QDs, amount of InAs supplied for seed- and active-QDs. These optimized parameters lowered the density of the seed-QDs strain spreading upward, which resulted in an enlargement of the active-QDs. We achieved a control of the extension of emission wavelength up to approximately 1.4 ・m. We also studied the growth of GaNAs/AlGaAs heterostructures on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. By introducing periodic growth interruption and nitrogen (N) supply to the interrupted surfaces during the growth of GaNAs, we achieved high controllability of the average N concentration in GaNAs layers. We observed three-dimensional island growth of GaNAs on the N-rich surfaces.
Extensions of emission wavelength of InAs/GaAs QDs by using bi-layer QD growth have been investigated. The extension has been found with an enlargement of the upper layer (active) QDs occurred by optimizing several growth parameters: growth temperature of lower (seed) QDs, amount of InAs supplied for seed- and active-QDs. These optimized parameters lowered the density of the seed-QDs strain spreading upward, which resulted in an enlargement of the active-QDs. We achieved a control of the extension of emission wavelength up to approximately 1.4 ・m. We also studied the growth of GaNAs/AlGaAs heterostructures on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. By introducing periodic growth interruption and nitrogen (N) supply to the interrupted surfaces during the growth of GaNAs, we achieved high controllability of the average N concentration in GaNAs layers. We observed three-dimensional island growth of GaNAs on the N-rich surfaces.
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[Presentation] Monolithic growth of multi-color InAs-QD ensembles for broadband and spectrum-shapecontrollable near-infrared light source2012
Author(s)
Nobuhiko Ozaki, Koichi Takeuchi, Yuji Hino, Yohei Nakatani, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto, Kiyoshi Asakawa, Richard A. Hogg
Organizer
The 2012 Collaborative Conference on Crystal Growth (3CG)
Place of Presentation
Orlando, Florida, USA
Year and Date
2012-12-11
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