2012 Fiscal Year Final Research Report
Control of ferroelectric properties by in-situ domain control
| Project/Area Number |
22560030
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Thin film/Surface and interfacial physical properties
|
|---|
| Research Institution | 防衛大学校 |
|---|
Principal Investigator |
NISHIDA Ken 防衛大学校, 電気情報学群, 准教授 (40299384)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
FUNAKUBO Hiroshi 東京工業大学, 総合理工学研究科, 教授 (90219080)
|
|---|
| Project Period (FY) |
2010 – 2012
|
| Keywords | 薄膜 / in-situ モニタリング |
|---|
| Research Abstract |
The mechanism of domain formation and control of domain structure was investigated using in-situ Raman-MOCVD (Metal Organic Chemical Vapor Deposition) combined equipment. The domain structure was formed with releasing the residual strain in the films and it can be controlled by changing of atmosphere during first decreasing temperature after first film deposition.
|
Research Products
(3 results)
-
-
-
[Presentation] In-situ observation at the various conditions of first cooling process after PbTiO3 film CVD deposition2012
Author(s)
M. Matsuoka, M. Nishide, K. Nishida, H. Shima, T. Tai, Kim J. W. , H. Funakubo, T. Yamamoto, and T. Katoda
Organizer
International Symposium on Integrated Functionalities (ISIF) 201
Place of Presentation
The Hong Kong Polytechnic University, Hong Kong, China
Year and Date
20120618-21
