2012 Fiscal Year Final Research Report
Analysis of CAtalyst-Referred etching by means of first-principles calculations
| Project/Area Number |
22560110
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Osaka University |
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Principal Investigator |
INAGAKI Kouji 大阪大学, 大学院・工学研究科, 助教 (50273579)
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| Co-Investigator(Renkei-kenkyūsha) |
MORIKAWA Yoshitada 大阪大学, 大学院・工学研究科, 教授 (80358184)
YAMAUCHI Kazuto 大阪大学, 大学院・工学研究科, 教授 (10174575)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 超精密加工 / 触媒援用加工法 / ワイドバンドギャップ半導体 / SiC / GaN / エッチング |
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| Research Abstract |
In this research, based on first-principles molecular-dynamicscalculation, SiC and GaN etching by highly-concentrated HF solution and pure water are analyzed, respectively. In both cases, dissociative adsorption reactions are simulated as an initial key stage of etching reaction. Reaction barriers for the dissociative adsorption of HF molecule on Platinum surface are clarified to be important to reduce barrier.
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