2012 Fiscal Year Final Research Report
Observation of defects induced by non thermal equilibrium processes and their control used by microwave absorption of free carriers
| Project/Area Number |
22560292
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
MIZUNO Tomohisa 神奈川大学, 理学部, 教授 (60386810)
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| Co-Investigator(Renkei-kenkyūsha) |
HASUMI Masahiko 東京農工大学, 大学院・工学研究院, 助教 (60261153)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 作製 / 評価技術 / マイクロ波フリーキャリヤ吸収 / 少数キャリヤ実効ライフタイム / 高圧水蒸気熱処理 / パッシベーション / 酸素プラズマ酸化膜 / A10_x薄膜 |
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| Research Abstract |
Equipments for measuring carrier density and minority carrier effective lifetime τ_eff induced by illumination with continuous and multiply-periodic pulses at 635 and 980 nm were developed. Decreases in τ_eff in the cases of plasma, laser heating treatment, and substrate cutting were observed using the equipments. Their analysis conclude marked increases in marked increase in the surface recombination velocity. Moreover, high pressure H_2O vapor heat treatment, microwave oven heating and amorphous silicon formation decreased the density of carrier recombination defects.
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