2012 Fiscal Year Final Research Report
New functional properties of IV based compound semiconductors of by structural modifications and application to thermoelectric devices
| Project/Area Number |
22560294
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Shizuoka University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
NAKAMURA Tamotsu 静岡大学, 工学部, 教授 (70023322)
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| Project Period (FY) |
2010 – 2012
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| Keywords | シリサイド / 熱電素子 / 結晶成長 / 自然エネルギー / ナノ構造制御 / 酸化 / メカニカルアロイング / 焼結体 |
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| Research Abstract |
IV based compound semiconductors were grown by mechanical alloying technique and other methods. The crystalline structure and their solid state properties of the compound are were characterized. Especially, the crystalline structure of cubic-CaxSi (x~4) was mainly examined by XRD, STEM with EDS, and its solid state properties were characterized by IR transmission spectrum, XPS, TG-DTA, Raman spectroscopy. It was demonstrated that new solid state properties of the compound were obtained. In addition, the temperature dependence of Seebeck coefficient and Resistivities of the compound was measured for the thermoelectric application. Moreover, the structural modifications are under investigation using the following nanostructure fabrications; metastable hexagoal-MoSi2nanosheets, CrSi2 nanowire bundle and dendrite structures, Mg2Ge, Mg2SiGe rods, and so on．
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Research Products
(35 results)
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[Journal Article] Growth of homogeneous polycrystalline Si1-xGexand Mg2Si1-xGexfor thermoelectric application2011
Author(s)
Yasuhiro Hayakawa, Mukannan Arivanandhan, Yosuke Saito, Tadanobu Koyama, Yoshimi Momose, Hiroya Ikeda, Akira Tanaka, Cuilian Wen, Yoshihiro Kubota, Tamotsu Nakamura, Shovit Bhattacharya, Dinesh Kumar Aswal, Sridharan Moorthy Babu, Yuko Inatomi, Hirokazu Tatsuoka
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Journal Title
Thin Solid Films
Volume: 519(24)
Pages: 8532-8537
Peer Reviewed
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[Journal Article] C. Wen, T. Nonomura, A. Kato, Y. Kenichi, H. Udono, K. Isobe, M. Otake, Y. Kubota, T. Nakamura, Y. Hayakawa, and H. Tatsuoka2011
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[Presentation] Growth of Homogeneous Si1-xGexand Mg2Si1-xGexfor Thermoelectric Application2012
Author(s)
Y. Hayakawa, M. Arivanandhan, M. Omprakash, T. Koyama, Y. Momose, H. Ikeda, A. Tanaka, H. Tatsuoka, A. Ishida, Y. Inatomi, D. K. Aswal, S. Bhattacharya and S. Moorthy Babu
Organizer
International Conference on Recent Trend in Advanced Materials
Place of Presentation
VIT University, Vellore, India.
Year and Date
20120200
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[Presentation] Simple Fabrication and Structural Modification of Silicide, Oxide and Metallic Nanostructures by Thermal Treatment2012
Author(s)
Hirokazu Tatsuoka, W. Li, E. Meng, D. Ishikawa, K. Nakane, S. Oda, T. Matsushita
Organizer
Collaborative Conference on Crystal Growth (3CG)
Place of Presentation
the Doubletree by Hilton Orlando at SeaWorld, Orlando, Florida, USA.
Year and Date
2012-12-12
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[Presentation] Syntheses and Electrical Properties of Hexagonal Phase Group VI Metal Silicide Powders, Sintered Compacts and Bulk Crystals2010
Author(s)
T. Nonomura, C. Wen, K. Shirai, K. Isobe, A. Kato, Y. Kubota, T. Nakamura, Y. Hayakawa and H. Tatsuoka
Organizer
3rd International Congress on Ceramics, 2010/Osaka, Japan, Symposium 9C Poster Session 8
Place of Presentation
Osaka International Convention Center.
Year and Date
2010-11-16
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