2012 Fiscal Year Final Research Report
Development of analysis technique for ultra-shallow junction in next generation MOSFET by MEIS-TOF-ERDA
| Project/Area Number |
22560295
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
ABO Satoshi 大阪大学, 極限量子科学研究センター, 助教 (60379310)
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| Co-Investigator(Kenkyū-buntansha) |
TAKAI Mikio 大阪大学, 極限量子科学研究センター, 教授 (90142306)
WAKAYA Fujio 大阪大学, 極限量子科学研究センター, 准教授 (60240454)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 組成分析 / 飛行時間計測 / 弾性反跳粒子検出法 / Time-of-Flight (TOF) / Elastic Recoil Detection Analysis (ERDA) |
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| Research Abstract |
An elastic recoil detection analysis (ERDA) technique with a toroidal electrostatic analyzer (TEA) for an energy analysis and a time-of-flight (TOF) technique for a mass separation was developed for an analysis of the ultra shallow junction in shrunk semiconductor devices required in the international technology roadmap for semiconductors (ITRS). Three standard samples were measured with the developed medium energy ion scattering (MEIS)-TOF-ERDA system with high mass resolution and high count yield. The results indicate that the depth resolution required in the ITRS can be realized by the developed MEIS-TOF-ERDA.
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Research Products
(9 results)
