2012 Fiscal Year Final Research Report
Study of Quasi-ballistic Electron Transport in Silicon NanodotArray
| Project/Area Number |
22560296
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
MORI Nobuya 大阪大学, 大学院・工学研究科, 准教授 (70239614)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 半導体 / シリコン / ナノ結晶 / 量子輸送 / ミュレーション / トンネル / 弾道輸送 / インパクトイオン化 |
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| Research Abstract |
A model to describe the underlying physics of high-energy ballistic electron emission from a porous silicon diode consisting of nanometer-size Si nanodot (SiND) is presented. The model is based on an atomistic tight-binding method combined with semiclassical Monte Carlo simulation. It well reproduces essential features of experimental findings. The model is extended to be applicable to metal-semiconductor diodes consisting of SiND films. Strain effects on avalanche multiplication in a one-dimensional SiND array have been theoretically studied. Larger carrier multiplication factor is observed under compressive strain condition. Impacts of atomic disorder on avalanche multiplication have been theoretically studied. The disorder lifts the degeneracy of the energy levels and reduces the impact-ionization threshold. This leads to a larger carrier multiplication factor in the disordered SiND array compared to an ideal SiND array without disorder or strain.
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