2012 Fiscal Year Final Research Report
Low-temperature formation and defect control of high-k dielectrics by PA-ALD
| Project/Area Number |
22560307
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo University of Science, Suwa |
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Principal Investigator |
FUKUDA Yukio 諏訪東京理科大学, システム工学部, 教授 (50367546)
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| Co-Investigator(Kenkyū-buntansha) |
ISHIZAKI Hiroki 諏訪東京理科大学, システム工学部, 助教 (20383507)
OTANI Yohei 諏訪東京理科大学, システム工学部, 准教授 (40434485)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 誘電体薄膜 / 表面・界面物性 / 超薄膜 / MOS 構造 / プラズマ酸化 / 原子層堆積 法 / 酸化ハフニウム / 酸化アルミニウム |
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| Research Abstract |
In the present research subject, we have investigated the atomic layer depositions of high-k metal oxides on silicon and germanium substrates using microwave-generated atomic oxygen as an oxidant. We have found that silicates and germanates of high-k metals are spontaneously formed on silicon and germanium substrates, respectively, at low temperatures lower than 300℃.
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