2012 Fiscal Year Final Research Report
Attempt of application of half-metal granular to spin transistor structure
| Project/Area Number |
22560308
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Daido University |
|---|
Principal Investigator |
|
|---|
| Project Period (FY) |
2010 – 2012
|
| Keywords | 電気・電子材料(半導体) / 誘電体 / 磁性体 / 超誘電体 / 有機物 / 絶縁体 / 超伝導体 |
|---|
| Research Abstract |
The granular films consisting of a ful-Heusler CFAS alloy and Al2O3 exhibited a large MR ratio of about 18% at room temperature. This value is the largest value ever reported for magnetic metal-insulator granular films. It was suggested that the large MR ratio was obtained owing to the existence of granules with L21 or B2 phases, which exhibit high spin polarization. This result showed the possibility of the application of the half-metal to the granular films.
|
Research Products
(9 results)
