2012 Fiscal Year Final Research Report
Study of spin-transfer torque MRAM using thermal assistnce
| Project/Area Number |
22560315
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | 公益財団法人名古屋産業科学研究所 (2012)
Nagoya Industrial Science Research Institute (2010-2011) |
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Principal Investigator |
TSUNASHIMA Shigeru 公益財団法人名古屋産業科学研究所, その他部局等, 研究員 (80023323)
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| Co-Investigator(Renkei-kenkyūsha) |
IWATA Satoshi 名古屋大学, 大学院工学研究科, 教授 (60151742)
KATO Takeshi 名古屋大学, 大学院工学研究科, 准教授 (50303665)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 電気 / 電子材料 / メモリ / 磁性薄膜 |
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| Research Abstract |
Heat-assistance of the MRAM cell during the writing is considered to be effective to reduce the critical current density for the spin transfer torque (STT) switching. We fabricated giant magneto-resistance films with GdFeCo memory layers and investigated their STT switching aiming for the application to the thermally assisted MRAM. We also fabricated perpendicularly magnetized tunnel junctions with TbFe layer which has a large perpendicular anisotropy and low curie temperature. In both experiments we found that heat assistance is effective to reduce the current density for the STT switching.
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