2012 Fiscal Year Final Research Report
Enhancement of liquid cluster ion beam intensity for application in semiconductor industry
| Project/Area Number |
22560329
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Kyoto University |
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Principal Investigator |
RYUTO Hiromichi 京都大学, 工学(系)研究科(研究院), 講師 (20392178)
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| Co-Investigator(Kenkyū-buntansha) |
TAKAOKA H. Gikan 京都大学, 工学(系)研究科(研究院), 教授 (90135525)
TAKEUCHI Mitsuaki 京都大学, 工学(系)研究科(研究院), 助教 (10552656)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 微細プロセス技術 |
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| Research Abstract |
The liquid cluster ion beam apparatus was modified to realize applications of the liquid cluster ion beam technique in the industry such as the semiconductor industry. An intense water cluster ion beam with a beam current density of approximately 3 μA/cm2was obtained. The sputtering yields of silicon and PMMA induced by water cluster ions were large. The modification of the apparatus enabled the usage of acetone as the cluster source material. An acetone cluster ion beam was produced without using helium as a support gas. The sputtering yield of silicon induced by the irradiation of an acetone cluster ion beam was large.
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