2012 Fiscal Year Final Research Report
Development of GaN pH sensor for the surveillance of cell culture
| Project/Area Number |
22560332
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | The University of Tokushima |
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Principal Investigator |
AO Jin-ping 徳島大学, 大学院・ソシオテクノサイエンス研究部, 准教授 (40380109)
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| Project Period (FY) |
2010 – 2012
|
| Keywords | pHセンサ / 窒化ガリウム / AlGaN/GaN へテロ構造 / GaN MOSFET / 耐熱電極 |
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| Research Abstract |
The goal of this research project is the development of pH sensor based on AlGaN/GaN heterostructure for the surveillance of cell culture. TiN Schottky electrode which could stand high temperature was developed using reactive sputtering. By optimizing the fabrication process of GaN MOSFET on AlGaN/GaN heterostructure which can be used as pH sensor, device with electron mobility of about 160 cm2/Vs was obtained. Through the research steps of design, fabrication, implementation and device evaluation, proper operation up to 80・C was confirmed. In the whole temperature ranges, near ideal sensitivity values were achieved.
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