2012 Fiscal Year Final Research Report
Resistance Reduction of Ultra-fine Copper Interconnects by Annealing in Supercritical Fluids or with Electromigration
| Project/Area Number |
22560344
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Shibaura Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Keywords | 集積回路配線 / 半導体超微細化 / デバイス設計・製造プロセス / 電子・電気材料 |
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| Research Abstract |
Ultra-fine copper (Cu) interconnects used for integrated circuit are composed with fine crystal Cu grains. In this study, new annealing methods for enlargingthe grain sizes which lead to less scattering of electrons at the grain boundaries and the reduction of interconnect resistance. It was found that annealing in supercritical fluid (SC annealing) or under current stress (EM annealing) can enhance the grain growth by cleaning effect of supercritical fluids on Cu surfaces and electromigration (EM) effect, respectively. It was also found that an anisotropic grain growth along the current direction was obtained by EM effect with EM annealing. The obtained results will lead to the reduction of interconnect resistance and improved reliability.
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[Journal Article] Grain Growth Enhancement of Electroplated Copper Film by Supercritical Annealing2010
Author(s)
Kazuyoshi Ueno, Yuji Shimada, Shigeru Yomogida, Seishi Akahori,Tomohiko Yamamoto,Takamasa Yamaguchi, Yoshinori Aoki, Akiko Matsuyama, Takashi Yata,, Hideki Hashimoto
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Journal Title
Japanese Journal of Applied Physics
Volume: 49 05FA08
Pages: 1-6DOI:10.1143/JJA
DOI
Peer Reviewed
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