2012 Fiscal Year Final Research Report
Electronic Structure and Impurity Concentration for Conducting Region of Proton Conductor by Soft-X-ray Spectroscopy
| Project/Area Number |
22560670
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Inorganic materials/Physical properties
|
|---|
| Research Institution | Tokyo University of Science |
|---|
Principal Investigator |
HIGUCHI Tohru 東京理科大学, 理学部, 講師 (80328559)
|
|---|
| Project Period (FY) |
2010 – 2012
|
| Keywords | 軟エックス線発光分光 / プロトン伝導体 / 電子構造 / 不純物濃度 / 酸素欠損 / 価電子帯 / 混成軌道 / 結合距離 |
|---|
| Research Abstract |
The electronic structure ofproton conductor BaCe0.9Y0.1O3.8 hin film prepared by RF magnetron sputtering have probed by soft-X-ray spectroscopy. The thin film was crystallized at 500℃, which corresponds to the temperature region of proton conduction. The proton conductivity of the thin film accords with that of the bulk crystal. The hole and acceptor level were observed in the band gap region by X-ray absorption spectroscopy. The oxygen defect-induced state was also observed at the bottom of the conduction band. From the quantitative analysis, the author have clarified that hole of 30% and oxygen vacancy of 70% is created in the crystal lattice against of acceptor concentration.
|
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[Presentation] 軟X線分光によるBaZr1-xYxO3の電子構造2010
Author(s)
樋口透、府川裕行、Olalde-Velasco, Jeng-Lung Chen, Yi-ShengWanli Yang、Paul Liu,Jinghua Guo、井口史匡、 長尾祐樹、佐多教子、湯上浩雄
Organizer
固体イオニス討論会
Place of Presentation
仙台
Year and Date
2010-11-24
-
