2012 Fiscal Year Final Research Report
Control of embedded Si nanocrystals in SiO2 by ion and laser beams
| Project/Area Number |
22604002
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Quantum beam science
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| Research Institution | Aichi University of Education |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Keywords | イオン・レーザービーム / シリコンナノ結晶 / 光機能デバイス / 量子効果 |
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| Research Abstract |
In this work, the potentialities of excimer UV-light irradiation and rapid thermal annealing to enhance the photoluminescence and to achieve low temperature formation of Si nanocrystals have been investigated. The implanted samples were subsequently irradiated with an excimer-UV lamp. After the process, the samples were rapidly thermal annealed before furnace annealing. We found that the luminescence intensity is strongly enhanced with excimer-UV irradiation and RTA.
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