2012 Fiscal Year Final Research Report
Development of InGaSb hole localized quantum dot structure for quantum communication
| Project/Area Number |
22656070
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Muroran Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Keywords | 薄膜 / 量子構造 |
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| Research Abstract |
Type II hole localized quantum dot structures were successfully grown on GaAs(001) substrates by metal-organic molecular beam epitaxy (MOMBE). Submicron-sized GaAsSb dots with low density of 10^6 cm^<-2> were fabricated by the reaction between MO precursors and surface atoms. The facet structures can be fabricated by the selective surface etching using TDMASb. They were found to be laterally surrounded by {111} and {110} facets together with circular (001) facet (120nm in diameter) at a convex curved region. On the other hand, GaAs nano-ring structures with ～6 nm in height and ～400 nm in diameter were fabricated by the etching of the submicron-sized dots. Quantum dot pair was grown selectively on the facet of nano-ring structure. This result suggests that the quantum dots were produced preferentially on the (411)B facet. We demonstrate new fabrication processes of hole localized quantum dot structures through control of dot densities and generation positions.
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