2011 Fiscal Year Final Research Report
Creation of oxide heterostructures with magnetic particles and their application to semiconductor-based electronic devices
| Project/Area Number |
22656071
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
NAKANE Ryosho 東京大学, 大学院・工学系研究科, 特任講師 (50422332)
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| Project Period (FY) |
2010 – 2011
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| Keywords | 結晶成長 / 電子・電気材料 / 電子デバイス・機器 / 量子閉じ込め / 磁性 |
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| Research Abstract |
The aim of this research is to create oxide heterostructures with magnetic particles and their application to semiconductor-based electronic devices. To achieve this, an epitaxial oxide/Si substrate structure is needed for a template. Using high-ultra-vacuum electron beam evaporation with an optimum substrate temperature and O2 gas pressure, Al2O3 was epitaxially grown on a Si(111) substrate. To analyze the phase of Al2O3, stoichiometry, and the heterointerface, X-ray photoelectron spectroscopy was performed for the fabricated epitaxial structure.
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