2011 Fiscal Year Final Research Report
Toward room temperature operation of Si single-dopant devices by P and B codoping techniques
| Project/Area Number |
22656082
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Electron device/Electronic equipment
|
|---|
| Research Institution | Shizuoka University |
|---|
Principal Investigator |
TABE Michiharu 静岡大学, 電子工学研究所, 教授 (80262799)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
MIZUTA Hiroshi 北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 教授 (90372458)
|
|---|
| Project Period (FY) |
2010 – 2011
|
| Keywords | 電子デバイス・機器 / スピンデバイス / ドーパント複合体 |
|---|
| Research Abstract |
In this work, the following results have been obtained. When the size of Si channel is within the order of nanometers, P donor has larger ionization energy than its value in Si bulk. Then, it is shown that the energy depth of quantum well for electrons can be further deepened, as a result of appropriate configuration of B and P atoms.
|
