2011 Fiscal Year Final Research Report
Development of multi-phase bonding for wafer level processing of 3D system in package
| Project/Area Number |
22656083
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Osaka University |
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Principal Investigator |
FUJIMOTO Kouzou 大阪大学, 大学院・工学研究科, 教授 (70135664)
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| Co-Investigator(Kenkyū-buntansha) |
FUKUMOTO Shinji 大阪大学, 大学院・工学研究科, 准教授 (60275310)
MATSUSHIMA Michiya 大阪大学, 大学院・工学研究科, 助教 (90403154)
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| Project Period (FY) |
2010 – 2011
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| Keywords | 低温接合 / 銅 / 高融点金属間化合物 / マイクロ接合 / 低融点金属 |
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| Research Abstract |
Recently, high performance copper joint is really needed to be used at high temperature with increasing demand in high density packaging technology. The bonding process must be carried out less than 300°C. In the present study, Cu and Sn were interlaminated at the faying surface, which produced multi-phases interlayer during the bonding process. The conclusive bond layer consisted of Cu3Sn which is high melting point intermetallic compound. Moreover, the voids could be reduced by addition of tiny bit of zinc.
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