2013 Fiscal Year Final Research Report
Development of on-demand single photon emitter by precisive charge number controlling on semiconductor nanoparticles
| Project/Area Number |
22681012
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Project Period (FY) |
2010-04-01 – 2014-03-31
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| Keywords | 単一光子 / ナノ粒子 / 単一電子 / 単一電子トランジスタ / 結晶欠陥 |
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| Research Abstract |
Aim of this study was verification of on-demand single photon emitting devices by controlling the number of electrons and refractive index of single photon emitter. We have been headed for on-demand single photon emitter with electrical spins by using colloidal semiconductor, crystalline defects in Si, and direct transition of Ge as single photon source with nanogap electrodes structure. We have demonstrated (1) single electron transistor with nanogap electrodes and colloidal nanoparticles, (2) electroluminescence and optical amplification by silicon defect engineering, (3) construction of confocal microscope with high numerical aperture by using solid immersion lens, (4) optical spin injection into direct transition of Ge-based structure.
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