2013 Fiscal Year Final Research Report
Investigation of large tunnel magnetoresistance of 1000% in double tunnel junctions
| Project/Area Number |
22686001
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
NAGANUMA Hiroshi 東北大学, 工学(系)研究科(研究院), 助教 (60434023)
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| Co-Investigator(Renkei-kenkyūsha) |
MIYAZAKI Takamichi 東北大学, 大学院・工学研究科, 技術職員 (20422090)
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| Project Period (FY) |
2010-04-01 – 2014-03-31
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| Keywords | 磁気抵抗 / トンネル素子 / MgO障壁 |
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| Research Abstract |
Gate bias voltage dependence and systematic investigation of microscopic structure at the interface was carried out in order to clarify the magnetoresistance effect of the double magnetic tunnel junctions (DBMTJs). Gate bias was made a noble element by the side-gate system in the DBMTJs. As a result,Coulomb blockade tunneling was modulated by the side-gate bias voltage. However, the modulation effect is weak, and it was found that it is necessary to increase the bias voltage effect by decreasing the distance between the two side-gates. Further, atomic diffusion and strain was observed by high resolution transmission electron microscopy observation. Increase of the magnetoresistance ratio due to gate modulation was obtained by the present study; however, the enhancement was found to be significantly lower than the theoretical prediction.
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[Journal Article]2013
Author(s)
N. Tal, D. Mogilyanski, Andras Kovacs, Hiroshi Naganuma, Sumito Tsunegi, Mikihiko Oogane, Yasuo Ando, and Amit Kohn
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Journal Title
Journal of Applied Physics
Volume: 114巻
Pages: 163904
DOI
Peer Reviewed
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