2013 Fiscal Year Final Research Report
Control of band structure in strained silicide structures
| Project/Area Number |
22686032
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (A)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Kagoshima University (2013)
Osaka University (2010-2012) |
|---|
Principal Investigator |
|
|---|
| Project Period (FY) |
2010-04-01 – 2014-03-31
|
| Keywords | 結晶成長 / 半導体光物性 |
|---|
| Research Abstract |
Semiconducting silicide, beta-FeSi2, is a novel silicon-optoelectronic material which shows photoresponse and light emission in the wavelength range of near infrared. In this study, we have studied the strain-induced modification of band structure in beta-FeSi2. In the results, it was revealed that an introduction of strain along a-axis direction of the beta-FeSi2 epitaxial film is effective to control the band structure from indirect transition type to direct transition one. In addition, we have succeeded in the growth of high quality beta-FeSi2 epitaxial film with low residual carrier concentration.
|
